Abstract: A virtual machine migration method and apparatus, that the method includes: downloading an image file of a to-be-migrated virtual machine from an object storage; starting a preset command to process the downloaded image file, to obtain a private image corresponding to the image file of the to-be-migrated virtual machine, and provisioning, by using the private image, a virtual machine that runs on a destination virtualization platform, where the preset command is configured based on a difference between a source virtualization platform and the destination virtualization platform. According to the foregoing method, the image file of the to-be-migrated virtual machine is processed by executing the preset command, so that automatic migration of the image file of the to-be-migrated virtual machine can be implemented, and a user does not need to perform a manual operation. This effectively improves migration efficiency and meets a user requirement.

Abstract: Embodiments of the present disclosure disclose a network access method and system. Near Field Communication (NFC) communication is established with a mobile terminal through a first NFC chip. Wireless Fidelity (WIFI) data transmitted by a customer premise equipment through a short-range wireless connection is obtained, and is transmitted to the mobile terminal through the NFC communication, so that the mobile terminal is connected to the customer premise equipment based on the WIFI data.

Abstract: Sequence-block copolymers have well-controlled and precise monomer sequence. A highly ordered fluoro-containing block copolymer material can be prepared based on the sequence-block copolymer, which shows excellent patterning capability.

Abstract: A resin including a highly sequenced copolymer is presented, and the preparation and application of its resist composition is presented. The resist has excellent performance and can promote the development of integrated circuits.

Abstract: A range hood, including a housing with an opening at one side and a fume inlet panel component which is provided on the housing, the fume inlet panel component is provided at the opening of the housing, a fan is provided in an inner cavity of the housing, the fume inlet panel component is configured in such a way that at least a region of the opening of the housing corresponding to the fan can be opened, and the fan can be removed from the region. When the fan and an inner surface of a volute need to be cleaned, a user can conveniently remove the fan from one side of the fume inlet panel component and clean the removed fan and access an interior of the volute to clean an inside surface of the volute, ensuring extraction capability and increasing a service life of the range hood.

Abstract: A virtual machine migration method and apparatus, that the method includes: downloading an image file of a to-be-migrated virtual machine from an object storage; starting a preset command to process the downloaded image file, to obtain a private image corresponding to the image file of the to-be-migrated virtual machine, and provisioning, by using the private image, a virtual machine that runs on a destination virtualization platform, where the preset command is configured based on a difference between a source virtualization platform and the destination virtualization platform. According to the foregoing method, the image file of the to-be-migrated virtual machine is processed by executing the preset command, so that automatic migration of the image file of the to-be-migrated virtual machine can be implemented, and a user does not need to perform a manual operation. This effectively improves migration efficiency and meets a user requirement.

Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).

Abstract: A range hood, including a housing with an opening at one side and a fume inlet panel component which is provided on the housing, the fume inlet panel component is provided at the opening of the housing, a fan is provided in an inner cavity of the housing, the fume inlet panel component is configured in such a way that at least a region of the opening of the housing corresponding to the fan can be opened, and the fan can be removed from the region. When the fan and an inner surface of a volute need to be cleaned, a user can conveniently remove the fan from one side of the fume inlet panel component and clean the removed fan and access an interior of the volute to clean an inside surface of the volute, ensuring extraction capability and increasing a service life of the range hood.

Abstract: The present invention discloses a block copolymer comprising at least a block A and a block B, wherein the monomer of block A contains one or more of the structural units: a C3-C6 alkenyl group containing a substituent or a C3-C6 alkenyl group; wherein the number of R1 is 0, 1, 2, 3, 4 or 5; R2 is selected from the group consisting of: absent, substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C1-C6 alkoxyl, hydroxyl, halogen; “substituted” means a group is substituted by one or more substituents selected from halogen and hydroxyl; block B is obtained by polymerization of the monomer R6 is selected from F or a group containing F, and the number of R6 is 0, 1, 2, 3, 4 or 5. The block copolymer can assemble rapidly at a low temperature with self-repairing performance to reduce the defect rate.

Abstract: The present invention relates to a rapid assembled small-sized block polymer material with low quenching temperature and the preparation and application thereof. In particular, the present invention discloses a block copolymer, and glass transition temperature of the block copolymer is less than 120° C. The present invention also discloses the preparation and application of the block copolymer. The block copolymer can achieve excellent phase separation and rapid patterning at a lower annealing temperature (e.g. 80° C.) and a shorter annealing time (e.g. 30 s), and a photolithographic pattern with a very high resolution (e.g. 5 nm half-pitch) can be further obtained by etching, which provides a new photolithographic mean for further extension of Moore's Law to achieve semiconductor photolithography with a resolution of less than 10 nm, or even 5 nm (half-pitch).

Abstract: Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

Abstract: A method for forming a sol gel-zeolite composite dielectric material is herein described. Zeolite particles may be dispersed in a sol creating a liquid sol-zeolite colloid. The liquid sol-zeolite colloid may be deposited on an underlying layer. The liquid sol-zeolite colloid may be formed into a wet gel-zeolite composite. All of the liquid may be extracted from the wet gel-zeolite composite to form an aerogel-zeolite composite. Then the wet gel-zeolite composite or the aerogel-zeolite composite may be calcined to freeze the structure of the composite material.

Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer or other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The Zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dielectric.

Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.

Abstract: A wash composition that includes a polymeric surfactant and methods for using the wash composition are described herein.

Abstract: A wash composition that includes a polymeric surfactant and methods for using the wash composition are described herein.

Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

Abstract: A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer of other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dilectric.

Abstract: A method for forming a sol gel-zeolite composite dielectric material is herein described. Zeolite particles may be dispersed in a sol creating a liquid sol-zeolite colloid. The liquid sol-zeolite colloid may be deposited on an underlying layer. The liquid sol-zeolite colloid may be formed into a wet gel-zeolite composite. All of the liquid may be extracted from the wet gel-zeolite composite to form an aerogel-zeolite composite. Then the wet gel-zeolite composite or the aerogel-zeolite composite may be calcined to freeze the structure of the composite material.