Abstract: Provided are a reset-type charge-sensitive amplifying circuit, and a method for amplifying and resetting a data signal. The reset-type charge-sensitive amplifying circuit includes a signal input buffer module, a signal output amplifying module, and a reset pulse signal generation module. The signal input buffer module is connected to the signal output amplifying module, a first terminal of the signal input buffer unit is electrically connected to a semiconductor radiation detector, and a second terminal of the signal input buffer unit is electrically connected to a voltage bias unit. The signal output amplifying module is connected to the reset pulse signal generation module. The reset pulse signal generation module includes a voltage comparison unit, a reset pulse width modulation unit, and a reset pulse amplifying unit.

Abstract: The present disclosure provides a magnetic resonance imaging (MRI) radio frequency (RF) coil assembly. The MRI RF coil assembly may include one or more coils and one or more control circuits. Each of the one or more coils may include a first end and a second end. Each of the one or more control circuits may electrically connect the first end and the second end of one of the one or more coil. Each of the one or more control circuits may be configured to adjust an operation of the coil that is electrically connected with the control circuit based on an input control signal. The one or more control circuits may be located at different regions.

Abstract: The present invention discloses an irradiation-resistant GaN HEMT with decoupling reverse conduction capability and a fabricating method thereof. First gate region metal and second gate region metal are sectionally distributed on a p-type gallium nitride layer in a gate region of the transistor, where the first gate region metal consists of first Schottky metal layers and second ohmic metal layers, and the second gate region metal only consists of a second Schottky metal layer; dielectric layers are filled between the first gate region metal and the second gate region metal, an interconnection metal layer is arranged above the first gate region metal and is connected to an interconnection metal layer above a source to form a reverse freewheeling diode; and gate metal layers are arranged above the second gate region metal and are used as a real gate of the transistor.

Abstract: The present invention discloses a GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof. The transistor includes a substrate layer, a gallium nitride layer, a barrier layer, and a gate structure successively arranged from bottom to top. The gallium nitride layers on both sides of the barrier layer are respectively provided with a source electrode and a drain electrode on the top surface. The gate structure is located near the source electrode and includes a p-type gallium nitride layer, a dielectric layer, an Ohmic metal pillar, and a Schottky metal layer. The present invention solves the breakdown problem caused by the inability to release impact energy during the switching process by introducing an asymmetric multi-integrated gate structure.

Abstract: A wide bandgap semiconductor structure for an irradiation characteristic test includes a substrate with metal plates and a wide bandgap semiconductor part. The wide bandgap semiconductor part includes a gallium nitride layer, a barrier layer, P-type gallium nitride layers, source ohmic metal layers, and drain ohmic metal layers. The P-type gallium nitride layers are connected to a gate interconnection metal layer via gate metal layers and metal lead wires. A gate top metal layer is provided on the gate interconnection metal layer. Each source ohmic metal layer is provided with a source interconnection metal layer and source top metal layers. Each drain ohmic metal layer is provided with a drain interconnection metal layer and drain top metal layers. The wide bandgap semiconductor part is connected to the metal plates through the source top metal layers, the drain top metal layers, and the gate top metal layer.

Abstract: The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the gallium nitride layer. A Schottky metal layer is provided on the p-type gallium nitride layer. A first ohmic metal layer and a second ohmic metal layer are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the barrier layer. The second ohmic metal layer includes inner gear electrodes and outer gear electrodes, which are interdigital with each other.

Abstract: The present invention discloses a GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof. The transistor includes a substrate layer, a gallium nitride layer, a barrier layer, and a gate structure successively arranged from bottom to top. The gallium nitride layers on both sides of the barrier layer are respectively provided with a source electrode and a drain electrode on the top surface. The gate structure is located near the source electrode and includes a p-type gallium nitride layer, a dielectric layer, an Ohmic metal pillar, and a Schottky metal layer. The present invention solves the breakdown problem caused by the inability to release impact energy during the switching process by introducing an asymmetric multi-integrated gate structure.

Abstract: The present invention describes an electric-thermal-hydrogen multi-energy device planning method for zero energy buildings, including the following specific steps: firstly, constructing operation constraints of electric and thermal devices in the zero energy buildings; secondly, constructing operation constraints of hydrogen devices including the electrolyzer, the fuel cell and the hydrogen storage device; then, in view of constraints on annual zero energy of the buildings, establishing the robust electric-thermal-hydrogen multi-energy device planning model considering source-load uncertainties; and finally, solving the robust electric-thermal-hydrogen multi-energy device planning model of the zero energy buildings by adopting an alternating optimization procedure based column-and-constraint generation algorithm.

Abstract: The present disclosure provides a magnetic resonance imaging (MRI) radio frequency (RF) coil assembly. The MRI RF coil assembly may include one or more coils and one or more control circuits. Each of the one or more coils may include a first end and a second end. Each of the one or more control circuits may electrically connect the first end and the second end of one of the one or more coil. Each of the one or more control circuits may be configured to adjust an operation of the coil that is electrically connected with the control circuit based on an input control signal. The one or more control circuits may be located at different regions.

Abstract: Disclosed is an incomplete dimensionality augmentation-based optimization method for a data-driven power system. By dividing a power flow independent variable into a control variable and a disturbance variable, such as power of a controllable power supply and an uncontrolled voltage amplitude, only the disturbance variable is subjected to dimensionality augmentation, to adapt to the nonlinear characteristic of the power flow; and the control variable keeps a power flow constraint as a linearized expression of the control variable, thereby simplifying a power flow constraint form and solution, and achieving a higher-accuracy of optimization. The power optimization scheduling of distributed photovoltaic can be implemented by the optimization method provided in the present invention.

Abstract: The present invention discloses an in-situ testing system for semiconductor device in aerospace irradiation environment. The present invention includes a static testing unit, a static testing channel, a dynamic testing unit, a dynamic testing channel, and a channel switching control unit; the static testing unit is connected to the device under test through the static testing channel, and is used to output static testing signals and display the static testing data of the device under test; the dynamic testing unit is connected to the device under test through the dynamic testing channel, and is used to output dynamic testing signals and display the dynamic testing data of the device under test; the channel switching control unit is connected to the static testing channel and the dynamic testing channel, respectively. This invention can achieve static, dynamic, and degradation testing of third-generation semiconductor device in aerospace irradiation environment.

Abstract: Disclosed is a method for constructing a security region of an integrated electricity and heating system, falling into the field of energy system modeling and operational analysis. The method specifically includes: establishing a dynamic model of the integrated electricity and heating system, including a power system model, a quality-regulated heating system dynamic model, and a combined heat and power unit dynamic model; constructing, in combination with operational security constraints, a security region model of the integrated electricity and heating system considering thermal dynamics; and solving, aiming at nonlinear and nonconvex characteristics of the security region of the integrated electricity and heating system, a security region boundary by an optimization-check-based concave hull method. Compared with the related art, the method considers thermal dynamics in the integrated electricity and heating system, and accurately depicts operational features.

Abstract: The present invention discloses a novel silicon carbide-based lateral PN junction extreme ultraviolet detector with enhanced detection performance based on selective-area ion implantation, including an N-type ohmic contact lower electrode, an N-type substrate and a lightly-doped epitaxial layer which are connected sequentially from bottom to top, where the lightly-doped epitaxial layer is an N-type lightly-doped epitaxial layer or a P-type lightly-doped epitaxial layer; in a case that the lightly-doped epitaxial layer is an N-type or P-type lightly-doped epitaxial layer, a P-type or N-type well region is formed on the surface of the N-type or P-type lightly-doped epitaxial layer through the selective-area ion implantation, a P-type or N-type ohmic contact upper electrode is arranged on the P-type or N-type well region, and the P-type or N-type ohmic contact upper electrode is provided with a metal conductive electrode along its periphery.

Abstract: Embodiments of the present disclosure provide a radio frequency device and a magnetic resonance device. The radio frequency device may include a surface coil including at least one coil assembly. The at least one coil assembly may include a first coil assembly and a second coil assembly. The first coil assembly may include at least two first coil units arranged in an array. The second coil assembly may include at least one second coil unit. The first coil assembly and the second coil assembly may be arranged in a stacked configuration.

Abstract: The present disclosure provides surface coils and magnetic resonance devices. The surface coil may include: a radio frequency coil, a transmission line, and a preamplifier. The radio frequency coil may include at least one coil unit, the at least one coil unit receiving a magnetic resonance signal. One end of the transmission line may be connected to the radio frequency coil, another end of the transmission line may extend out of the radio frequency coil and may be connected to the preamplifier, and the transmission line may be configured to perform impedance transformations between the radio frequency coil and the preamplifier and transmit the magnetic resonance signal received by the radio frequency coil to the preamplifier. The preamplifier may receive and amplify the magnetic resonance signal received by the radio frequency coil.

Abstract: Embodiments of the present disclosure provide a magnetic resonance device and a radiofrequency coil thereof. The radiofrequency coil includes at least one coil portion. Each of the at least one coil portion includes one or more flexible protective layers and one or more flexible coil units. The one or more flexible coil units are disposed on the one or more flexible protective layers and used to receive a magnetic resonance (MR) signal of an object. The at least one coil portion includes a first array and a second array, the first array being configured to be disposed about a first part of the object with a first curvature, the second array being configured to be disposed about a second part of the object with a second curvature, or form a hyperbolic surface structure.

Abstract: The present invention discloses a novel silicon carbide-based lateral PN junction extreme ultraviolet detector with enhanced detection performance based on selective-area ion implantation, including an N-type ohmic contact lower electrode, an N-type substrate and a lightly-doped epitaxial layer which are connected sequentially from bottom to top, where the lightly-doped epitaxial layer is an N-type lightly-doped epitaxial layer or a P-type lightly-doped epitaxial layer; in a case that the lightly-doped epitaxial layer is an N-type or P-type lightly-doped epitaxial layer, a P-type or N-type well region is formed on the surface of the N-type or P-type lightly-doped epitaxial layer through the selective-area ion implantation, a P-type or N-type ohmic contact upper electrode is arranged on the P-type or N-type well region, and the P-type or N-type ohmic contact upper electrode is provided with a metal conductive electrode along its periphery.

Abstract: This disclosure may provide a system and a method. The method may include obtaining one or more sets of reference signals collected by a coil of a magnetic resonance imaging (MRI) device in a pre-scan. The pre-scan may be performed on a subject before an MRI scan of the subject. The method may also include obtaining a first fault detection model. The first fault detection model may be a trained machine learning model. The method may further include determining whether the coil has a failure based on the one or more sets of reference signals and the first fault detection model.

Abstract: A method for calculating an optimal energy flow of an integrated electricity-gas system comprises: a convex optimization part of an optimal energy flow model is established according to a fuel cost of each thermal power unit node and a gas supply cost of each nature gas source node, and a convex relaxation formula of a quadratic constraint of the optimal energy flow model is established, and a convex function is expanded by a first order Taylor expansion at a relaxation solution to form an expansion formula; a precision requirement threshold value of a non-convex constraint is given, the threshold value is compared with an unbalance magnitude of a non-convex constraint in the expansion formula; when the unbalance magnitude is greater than the threshold value, the expansion is iterated into a solution model of the integrated electricity-gas hybrid energy system until the unbalance magnitude is not greater than the threshold value.

Abstract: Disclosed herein are dosing regimens of GLP-1 and/or GLP-1 analog(s).