Patents by Inventor Hai-Pyng Liaw

Hai-Pyng Liaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxynitride fuse protective/passivation film for integrated circuit having resistors
    Patent number: 5365104
    Abstract: An oxynitride passivation layer and/or fuse protective layer for an SRAM cell having load resistors, where the composition of the oxynitride layer minimizes the effect of hydrogen diffusion on the resistance of underlying load resistors. The index of refraction of the oxynitride is between 1.60 and 1.85. This oxynitride does not substantially diffuse hydrogen into the load resistors even when heated to temperatures over 400.degree. C., and hence, avoids altering resistance during subsequent annealing steps.
    Type: Grant
    Filed: March 25, 1993
    Date of Patent: November 15, 1994
    Assignee: Paradigm Technology, Inc.
    Inventors: Norman Godinho, Hai-Pyng Liaw