Patents by Inventor Hai Reznik

Hai Reznik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Via wave guide with curved light concentrator for image sensing devices
    Patent number: 7678603
    Abstract: A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.
    Type: Grant
    Filed: February 26, 2008
    Date of Patent: March 16, 2010
    Assignee: Tower Semiconductor Ltd.
    Inventors: Hai Reznik, Amos Fenigstein, Doron Amihood, David Choen
  • Via Wave Guide With Curved Light Concentrator For Image Sensing Devices
    Publication number: 20080145965
    Abstract: A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.
    Type: Application
    Filed: February 26, 2008
    Publication date: June 19, 2008
    Applicant: Tower Semiconductor Ltd.
    Inventors: Hai Reznik, Amos Fenigstein, Doron Amihood, David Cohen
  • Via wave guide with curved light concentrator for image sensing devices
    Patent number: 7358583
    Abstract: A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: April 15, 2008
    Assignee: Tower Semiconductor Ltd.
    Inventors: Hai Reznik, Amos Fenigstein, Doron Amihood, David Cohen
  • Via wave guide with curved light concentrator for image sensing devices
    Publication number: 20070200054
    Abstract: A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 30, 2007
    Applicant: Tower Semiconductor Ltd.
    Inventors: Hai Reznik, Amos Fenigstein, Doron Amihood, David Cohen
  • Via wave guide with cone-like light concentrator for image sensing devices
    Publication number: 20070200055
    Abstract: A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a cone-like surface (e.g., having a tapered roundish or polygonal cross-section) extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes an optional lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 30, 2007
    Applicant: Tower Semiconductor Ltd.
    Inventors: Hai Reznik, Amos Fenigstein, Doron Amihood, David Cohen