Patents by Inventor Hai-Seok PARK

Hai-Seok PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Operating method of nonvolatile memory device and operating method of memory controller controlling the nonvolatile memory device
    Patent number: 9190163
    Abstract: An operating method of a memory controller controlling a nonvolatile memory device including a plurality of pages includes receiving a read request and a logical address from an additional device; determining a program state of an upper unselected word line of a selected word line corresponding to the received logical address; and transmitting a physical address corresponding to the logical address, state information, and a read command to the nonvolatile memory device according to a result of the determination in response to the read request, wherein the state information indicates a level of a first unselect read voltage the nonvolatile memory device is to apply to the upper unselected word line.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: November 17, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hai-Seok Park, Boh-Chang Kim, Hyung Suk Kim, Kiwhan Song
  • OPERATING METHOD OF NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF MEMORY CONTROLLER CONTROLLING THE NONVOLATILE MEMORY DEVICE
    Publication number: 20150036431
    Abstract: An operating method of a memory controller controlling a nonvolatile memory device including a plurality of pages includes receiving a read request and a logical address from an additional device; determining a program state of an upper unselected word line of a selected word line corresponding to the received logical address; and transmitting a physical address corresponding to the logical address, state information, and a read command to the nonvolatile memory device according to a result of the determination in response to the read request, wherein the state information indicates a level of a first unselect read voltage the nonvolatile memory device is to apply to the upper unselected word line.
    Type: Application
    Filed: July 11, 2014
    Publication date: February 5, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hai-Seok PARK, Boh-Chang KIM, Hyung Suk KIM, Kiwhan SONG