Abstract: A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.

Abstract: A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/?m or greater with respect to 193-nm incident light.

Abstract: Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/?m or greater with respect to 193-nm incident light.

Abstract: Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/?m or greater with respect to 193-nm incident light.

Abstract: A photoacid generator represented by Formula 1 or Formula 2: wherein R1, R2, and R3 are each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S+, and at least one CH2 group in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R5—S+A?, where R5 is a C1-C10 alkyl group, and A? is a counter-ion.

Abstract: Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/?m or greater with respect to 193-nm incident light.

Abstract: Provided is a method of forming a fine pattern using a block copolymer. The method comprises forming a coating layer including a block copolymer having a plurality of repeating units on a substrate. A mold is provided having a first pattern comprising a plurality of ridges and valleys. The first pattern is transferred from the mold into the coating layer. Then, a self-assembly structure is formed comprising a plurality of polymer blocks aligned in a direction guided by the ridges and valleys of the mold thereby rearranging the repeating units of the block copolymer within the coating layer by phase separation while the coating layer is located within the valleys of the mold. A portion of the polymer blocks are removed from among the plurality of polymer blocks and a self-assembly fine pattern of remaining polymer blocks is formed.

Abstract: A photoacid generator represented by Formula 1 or Formula 2: wherein R1, R2, and R3 are each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S+, and at least one CH2 group in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R5—S+A?, where R5 is a C1-C10 alkyl group, and A? is a counter-ion.

Abstract: The present invention relates to a polymer for data storage that is sensitive to a light source, a data storage media coated by the same, and a data storage device and method using the data storage media. In particular, the present invention relates to a polymer for data storage comprising two of the functional group of disperse red 1, which is a photoresponsive organic dye, bonded to a branched chain per every repeat unit, a data storage media coated by the same, a reversible and optical data storage device containing a thin film, and a data storage method using the device.

Abstract: There is provided a method for preparing an anatase type titanium dioxide photocatalyst having a particle size of nano level without a need of the sintering process at high temperature, and an anatase type titanium dioxide photocatalyst having a particle size nano level. The method for preparing an anatase type titanium dioxide photocatalyst having a particle size of nano level includes adding a titanium-based starting material to a selected solvent and adding an acid or base catalyst to the resulting aqueous solution. Next, subjecting the catalyst-containing aqueous solution to heat treatment at about 80±20° C. to activate peptization thereby preparing an anatase type titanium dioxide sol solution. Finally, the anatase type titanium dioxide sol solution is coated onto a support to complete the preparation of the photocatalyst.

Abstract: The present invention relates to a polymer for data storage that is sensitive to a light source, a data storage media coated by the same, and a data storage device and method using the data storage media. In particular, the present invention relates to a polymer for data storage comprising two of the functional group of disperse red 1, which is a photoresponsive organic dye, bonded to a branched chain per every repeat unit a data storage media coated by the same, a reversible and optical data storage device containing a thin film, and a data storage method using the device.