Abstract: A warning device (100, 212, 301, 302, 510) for use in a luminaire (201, 410, 501), comprising a housing (110, 210, 310) accommodating a drive module (115, 215, 401, 402, 520) arranged to be coupled to a luminaire and to a mains voltage (260, 560). The drive module comprises a light source (120, 420) coupled to a switch (180, 380, 491, 492) and an electrical interface (140, 240) configured to electrically connect the drive module and the mains voltage to a light element (530) of the luminaire. The housing comprises a lid (130, 230, 330) operably coupled to the switch of the drive module and configured to activate the switch upon an opening of the lid for switching on the light source upon a current of the mains voltage passing in the electrical interface and deactivate the switch module upon a closing of the lid for switching off the light source.

Abstract: In some examples, an electronic device includes a light guide. In some examples, the light guide includes a facial side and a rear side. In some examples, the facial side includes a lens to focus incoming light. In some examples, the rear side includes exit features to guide outgoing light. In some examples, the electronic device includes an image sensor disposed behind the lens to capture the incoming light.

Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

Abstract: A warning device (100, 212, 301, 302, 510) for use in a luminaire (201, 410, 501), comprising a housing (110, 210, 310) accommodating a drive module (115, 215, 401, 402, 520) arranged to be coupled to a luminaire and to a mains voltage (260, 560). The drive module comprises a light source (120, 420) coupled to a switch (180, 380, 491, 492) and an electrical interface (140, 240) configured to electrically connect the drive module and the mains voltage to a light element (530) of the luminaire. The housing comprises a lid (130, 230, 330) operably coupled to the switch of the drive module and configured to activate the switch upon an opening of the lid for switching on the light source upon a current of the mains voltage passing in the electrical interface and deactivate the switch module upon a closing of the lid for switching off the light source.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

Abstract: The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.

Abstract: A lighting device (10) is disclosed comprising a light engine (12) comprising at least one solid state lighting element (11); a controller (100) for controlling a dimming level of the light engine; a wireless communication module (16) communicatively coupled to the controller for receiving a wireless dimming instruction from a wireless controller (20); and a further communication module (15) communicatively coupled to the controller for connecting to a wired communication channel and for receiving a further dimming instruction from a further controller (30) wired to the further communication module through the wired communication channel; wherein the controller is adapted to independently control the dimming level of the light engine in response to the wireless dimming instruction and the further dimming instruction.

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Abstract: This invention generally relates to interference mitigation, and more specifically to interference mitigation in wireless communications networks. The proposed solution takes advantage of the clear channel assessment (CCA) function used by WLAN networks. Hence, by jamming the interfering WLAN channel during a predetermined time period, the interfering WLAN network is forced to withhold transmissions on the WLAN interfering channel during a backoff period of time. The solution of the subject application makes use of this backoff period to enable a WPAN network to transmit critical information such as, but not limited to, a request for changing the current working frequency.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: This invention generally relates to interference mitigation, and more specifically to interference mitigation in wireless communications networks. The proposed solution takes advantage of the clear channel assessment (CCA) function used by WLAN networks. Hence, by jamming the interfering WLAN channel during a predetermined time period, the interfering WLAN network is forced to withhold transmissions on the WLAN interfering channel during a backoff period of time. The solution of the subject application makes use of this backoff period to enable a WPAN network to transmit critical information such as, but not limited to, a request for changing the current working frequency.

Abstract: Disclosed is a lighting device comprising a solid state lighting element (20, 21, 101,102); a reflective arrangement (10) for reflecting luminous output of the solid state lighting element, the reflective arrangement comprising: a reflective conical central section (12) on a central axis of the lighting device; and an annular reflective body around the reflective conical central section, said body comprising an ellipsoid surface (14) having a first focal point lying inside the reflective conical central section and a second focal point, wherein the solid state lighting element is located at the second focal point; wherein the reflective conical central section (12) is movably mounted along said central axis. A lighting kit and luminaire including such a lighting device are also disclosed.

Abstract: A system for modulating audio effects of speakers is provided. The system includes a selecting module, a playing module, a recording module, a time delay computing module and a modulating module. Based on these modules, the system is capable of determining a time difference and a pitch for each of the speakers, and modulating the time difference and the pitch for each of the speakers to a desired time difference and a desired pitch, so as to ensure that simultaneous sounds from each speaker arrive at a microphone at about the same time and with the same audio pitch. A related method is also provided.