Patents by Inventor Hai-Wei Lin

Hai-Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984508
    Abstract: A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wu-Wei Tsai, Po-Ting Lin, Hai-Ching Chen, Chung-Te Lin
  • Publication number: 20240113225
    Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wu-Wei Tsai, Yan-Yi Chen, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Publication number: 20240113222
    Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.
    Type: Application
    Filed: January 3, 2023
    Publication date: April 4, 2024
    Inventors: Yan-Yi Chen, Wu-Wei Tsai, Yu-Ming Hsiang, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Patent number: 11227272
    Abstract: A business method of providing trade and data and analyzing suggestion to product and service platform includes following steps: a step of providing at least one vending machine, wherein a cash flow for a payment is processed by a consumer via the vending machine, and the vending machine provides a logistic flow of supplying product to the buyer; a step of listing at least one supplier; a step of establishing at least one payment mode means; a step of establishing at least one platform; and a step of establishing at least one data analysis; accordingly, the buyer and the supplier can both be provided with the product and the purchase payment in a safe means, the supplier can be prevented from wasting the product via a product data analysis or suggestion, so that the platform and the supplier can both have benefits and share the financial gains.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: January 18, 2022
    Assignee: EZ PLATFORM
    Inventors: Wen-Hsin Chen, Jack Tseng, Hai-Wei Lin