Patents by Inventor Haibao MU

Haibao MU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240106235
    Abstract: A high anti-interference microsystem based on System In Package (SIP) for a power grid is provided. The high anti-interference microsystem comprises a ceramic cavity, a ceramic substrate, a magnetic cover plate, a digital signal processing circuit, an analog signal conditioning circuit and a shield, wherein the ceramic cavity supports the ceramic substrate, the magnetic cover plate is in sealed contact with the ceramic cavity, and the ceramic substrate is arranged in a cavity formed by the ceramic cavity and the magnetic cover plate; a sealed shell of the microsystem based on SIP is composed of the magnetic cover plate and the ceramic cavity; the digital signal processing circuit and the analog signal conditioning circuit are arranged on the ceramic substrate and respectively process received signals to be processed; the shield covers an outer side of the sealed shell and is used for shielding external magnetic field interference.
    Type: Application
    Filed: August 2, 2023
    Publication date: March 28, 2024
    Applicant: Electric Power Research Institute of State Grid Zhejiang Electric Power Co., LTD
    Inventors: Xianjun SHAO, Xiaoxin CHEN, Yiming ZHENG, Chen LI, Jianjun WANG, Ping QIAN, Hua XU, Shaoan WANG, Shaohe WANG, Haibao MU, Huibin TAO, Lin ZHAO, Wenzhe ZHENG, Dun QIAN
  • Publication number: 20170176387
    Abstract: A device for calculating trapping parameters by measuring short-circuit current decay under a reverse bias voltage, including: a vacuum chamber, an experiment table, a lower electrode, a shielding layer, an upper electrode, a direct current charging module, a switch, a short-circuit measuring system, and a computer. The experiment table, the lower electrode, the shielding layer, the test sample, and the upper electrode are disposed from the bottom up in that order inside the vacuum chamber. The upper electrode is connected to the direct current charging module via the switch. The upper electrode and the lower electrode are electrically connected via the short-circuit measuring system. The short circuit or the detrapping current measuring circuit is selectively electrically connected under the control of the selective switch. The reverse bias voltage source and the microammeter are connected in series.
    Type: Application
    Filed: March 5, 2017
    Publication date: June 22, 2017
    Inventors: Weizheng ZHANG, Zhimin LI, Haibao MU, Guojian JI, Lin ZHAO, Yuan LI, Wenwei SHEN, Guanjun ZHANG, Furong LIU, Peng LU