Abstract: The present application discloses a method for manufacturing a metal zero layer, comprising: step 1, etching a zero interlayer film to form a first trench; step 2, performing first Ge ion implantation to form a first Ge layer in the zero interlayer film and achieve first amorphization; step 3, performing second Ge ion implantation to form a second Ge layer in the zero interlayer film and achieve second amorphization, wherein the depth of the second Ge layer is greater than the depth of the first Ge layer, and the second Ge ion implantation is tilt ion implantation; step 4, forming a metal silicide layer on the surface of an amorphous silicon layer in a self-aligned manner; step 5, filling the first trench with a first metal layer; and step 6, performing chemical mechanical polishing to fully remove the first metal layer outside the first trench and achieve planarization.

Abstract: A direct current circuit breaker handcart and a direct current switch apparatus are provided. In the direct current circuit breaker handcart, the current carrying element is located on the support surface, and includes a main circuit breaker and an auxiliary circuit breaker electrically connected with each other; the commutation element is located on the support surface, is electrically connected with the current carrying element, and includes a commutation capacitor, a commutation inductor, a commutation switch assembly, and a commutation capacitor charger electrically connected with each other; the repulsive assembly is configured to control opening and breaking off of the main circuit breaker; the energy absorbing element is located on the support surface, and is electrically connected with the current carrying element and the commutation element, respectively.

Abstract: The present application provides a method for monitoring a gate oxide thickness: providing a device structure comprising a gate structure, a gate oxide layer under the gate structure, source and drain regions and a base region; applying a voltage ?Vdd on the gate structure so that an accumulation layer is formed between the source and drain regions, applying a small AC voltage on the basis of the gate voltage ?Vdd; grounding the source and drain regions; applying a voltage signal close to 0 potential on the base region; obtaining the capacitance Cox between the gate structure and the base region by testing; and obtaining the thickness of a gate oxide layer according to the formula Tox=?*S/Cox. This technique accurately monitors the thickness of the gate oxide layer, and avoids those errors caused by existing methods.

Abstract: The application discloses a method for manufacturing a metal zero layer, comprising: step 1, providing a semiconductor substrate that undergoes a source and drain formation process of FEOL, wherein an inter-gate trench is formed in an area between dummy gate structures; step 2, forming a cut-off layer of metal zero layer in a selected area of the inter-gate trench; step 3, forming a metal zero layer in the inter-gate trench outside the cut-off layer of metal zero layer, and etching back the metal zero layer; step 4, forming a second oxide layer, the second oxide layer fully filling the inter-gate trench on the top surface of the metal zero layer, performing a planarization process to make the top surface of the second oxide layer level with the top surface of the dummy gate structure; and step 5, removing the dummy gate structure, and forming a second gate structure.

Abstract: A method for user recognition and emotion monitoring based on a smart headset is provided. —The smart headset includes an earplug part and a main body, wherein the earplug part is provided with a first microphone and a wearing detection sensor, and a housing of the main body is provided with a signal amplification circuit, a communication module, and a microcontroller. The wearing detection sensor is to detect whether a user wears the smart headset, and the first microphone is to obtain a sound signal in an ear canal. The sound signal is amplified, and then is outputted to the microcontroller. The amplified sound signal is transmitted by the microcontroller to a smart terminal paired with the smart headset to extract a heart sound signal characteristic, and legality of—identity of the user is validated and emotional state of the user is inferred according to the heart sound signal characteristic.