Abstract: The invention provides a method for treating cerebral apoplexy and hyperbilirubinemia by the compound or reagent for competitively inhibiting or blocking combination of bilirubin and the TRPM2 channel. The compound or the reagent is competitively combined with the D1069 residue of TRPM2 channel (the analogous D1066 residue of the mouse TRPM2). It is verified that bilirubin can serve as an extracellular endogenous agonist to be directly combined with the TRPM2 channel to aggravate brain tissue damage caused by stroke and hyperbilirubinemia, K928 and/or D1069 residues are key amino acid residues for playing roles. When the K928 and/or D1069 residues are mutated or competitively combined, the bilirubin is prevented from activating the TRPM2 channel; wherein D1069 residue mutation can effectively antagonize the nerve injury effect caused by bilirubin, which would be a therapeutic target for relieving and treating ischemic stroke and hyperbilirubinemia related brain damage.

Abstract: A rebalance method for blockchain-based decentralized file system is provided, and the method includes an encoded data rebalance method of a deleted node, and the encoded data rebalance method of the deleted node includes: broadcasting a codeword of the deleted node to all remaining nodes when one node of a node set is deleted; and decoding based on a current storage content and the codeword transmitted from the deleted node by each remaining node using a decoding function to obtain a data packet of each remaining node, and storing the data packet into each remaining node, to thereby generating a distributed target file storage system. The method can correct data skew and reduce replication factors while reducing a communication load of transmission codes during a rebalance phase, thereby ensuring optimal performance of the decentralized file system.

Abstract: The present disclosure relates to a method and a system for preparing urea by coupling denitration with electrocatalytic reduction. Specifically, the method of the present disclosure comprises: introducing an absorption solution containing nitrite and nitrate, which is generated by subjecting flue gas containing nitric oxide to a denitration step, into a separation step to separate the nitrite and the nitrate, thereby obtaining a solution rich in the nitrite and the nitrate; and introducing the solution rich in the nitrite and the nitrate generated in the separation step into an electrocatalysis step, and carrying out the electrocatalytic reduction in the presence of carbon dioxide or carbonate ions to generate a urea solution. The system of the present disclosure comprises: a denitration device, a separation device connected to the denitration device, and an electrocatalytic device connected to the separation device.

Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.

Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.