Patents by Inventor Haiding SUN

Haiding SUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTOELECTRONIC DEVICE HAVING A BORON NITRIDE ALLOY ELECTRON BLOCKING LAYER AND METHOD OF PRODUCTION
    Publication number: 20210313489
    Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Xiaohang LI, Wenzhe GUO, Haiding SUN
  • Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
    Patent number: 11069834
    Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: July 20, 2021
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Xiaohang Li, Wenzhe Guo, Haiding Sun
  • OPTOELECTRONIC DEVICE HAVING A BORON NITRIDE ALLOY ELECTRON BLOCKING LAYER AND METHOD OF PRODUCTION
    Publication number: 20200388722
    Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
    Type: Application
    Filed: September 12, 2018
    Publication date: December 10, 2020
    Inventors: Xiaohang LI, Wenzhe GUO, Haiding SUN
  • III-NITRIDE SEMICONUCTOR DEVICES HAVING A BORON NITRIDE ALLOY CONTACT LAYER AND METHOD OF PRODUCTION
    Publication number: 20200274024
    Abstract: A method for forming a III-nitride semiconductor device involves determining work functions of a first III-nitride contact layer and a first metal contact. The determined work function of the first III-nitride contact layer is based on a group III element of the first III-nitride contact layer. Based on the determined work functions of the first III-nitride contact layer and of the first metal contact, it is determined that the work function of the first III-nitride contact layer should be adjusted. The III-nitride semiconductor device is formed including the first III-nitride contact layer adjacent to a second III-nitride contact layer, the first metal contact arranged on the first III-nitride contact layer, and a second metal contact arranged on the second III-nitride contact layer.
    Type: Application
    Filed: October 15, 2018
    Publication date: August 27, 2020
    Inventors: Haiding SUN, Xiaohang LI