Abstract: A method for preparing a cross-dimension micro-nano structure array includes: S1. providing a workpiece immersed in the electrolyte as the first electrode, providing a trimming wire electrode as the second electrode and setting it above the workpiece, providing an interference beam adjuster and outputting multi-beam laser interference to irradiate the surface of the workpiece; S2. The power supply between the first electrode and the second electrode forms a loop, and drives the trimming wire electrode to reciprocate relative to the workpiece, and the workpiece undergoes electrochemical dissolution or electrochemical deposition at the corresponding position of the trimming wire electrode, and form a micro-nano structure array without a mask, and solves the problem of low output power of the existing ultrashort pulse power supply, improves the processing accuracy of the micro-nano structure array, does not require electrolyte for high-speed flow, and improves system safety and reduce the cost.

Abstract: A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiO3 layer, a La0.67Sr0.33MnO3 layer, and a (BaTiO3)0.5—(CeO2)0.5 layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO3, a second layer of La0.67Sr0.33MnO3, and a third layer of (BaTiO3)0.5—(CeO2)0.5 (in which an atomic ratio of BaTiO3 to CeO2 is 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiO3 can reach 40 nm.

Abstract: A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiO3 layer, a La0.67Sr0.33MnO3 layer, and a (BaTiO3)0.5—(CeO2)0.5 layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO3, a second layer of La0.67Sr0.33MnO3, and a third layer of (BaTiO3)0.5—(CeO2)0.5 (in which an atomic ratio of BaTiO3 to CeO2 is 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiO3 can reach 40 nm.

Abstract: A method for preparing a cross-dimension micro-nano structure array includes: S1. providing a workpiece immersed in the electrolyte as the first electrode, providing a trimming wire electrode as the second electrode and setting it above the workpiece, providing an interference beam adjuster and outputting multi-beam laser interference to irradiate the surface of the workpiece; S2. The power supply between the first electrode and the second electrode forms a loop, and drives the trimming wire electrode to reciprocate relative to the workpiece, and the workpiece undergoes electrochemical dissolution or electrochemical deposition at the corresponding position of the trimming wire electrode, and form a micro-nano structure array without a mask, and solves the problem of low output power of the existing ultrashort pulse power supply, improves the processing accuracy of the micro-nano structure array, does not require electrolyte for high-speed flow, and improves system safety and reduce the cost.