Patents by Inventor Haifan Liang

Haifan Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7109087
    Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.
    Type: Grant
    Filed: October 3, 2003
    Date of Patent: September 19, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Luc Van Autryve, Chris D. Bencher, Dean Jennings, Haifan Liang, Abhilash J. Mayur, Mark Yam, Wendy H. Yeh, Richard A. Brough
  • Patent number: 7078302
    Abstract: In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.
    Type: Grant
    Filed: February 23, 2004
    Date of Patent: July 18, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Yi Ma, Khaled Z. Ahmed, Kevin L. Cunningham, Robert C. McIntosh, Abhilash J. Mayur, Haifan Liang, Mark Yam, Toi Yue Becky Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Eugene Miner
  • Publication number: 20050186765
    Abstract: In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.
    Type: Application
    Filed: February 23, 2004
    Publication date: August 25, 2005
    Inventors: Yi Ma, Khaled Ahmed, Kevin Cunningham, Robert McIntosh, Abhilash Mayur, Haifan Liang, Mark Yam, Toi Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Miner
  • Publication number: 20050074986
    Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.
    Type: Application
    Filed: January 15, 2004
    Publication date: April 7, 2005
    Inventors: Luc Autryve, Chris Bencher, Dean Jennings, Haifan Liang, Abhilash Mayur, Mark Yam, Wendy Yeh, Richard Brough
  • Publication number: 20050074956
    Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.
    Type: Application
    Filed: October 3, 2003
    Publication date: April 7, 2005
    Inventors: Luc Autryve, Chris Bencher, Dean Jennings, Haifan Liang, Abhilash Mayur, Mark Yam, Wendy Yeh, Richard Brough
  • Patent number: 6071561
    Abstract: Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.
    Type: Grant
    Filed: June 16, 1999
    Date of Patent: June 6, 2000
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Keith Kramer, Haifan Liang