Abstract: An image sensor includes: a pixel, which includes a radiation sensing element, and an isolation structure between adjacent pixels configured to converge radiation propagating in the isolation structure to reduce radiation crosstalk between adjacent pixels.

Abstract: The present disclosure relates to an image sensor and a method of forming the same, and an image forming device. An image sensor includes: a substrate in which a photosensitive element region is formed; and a first light concentrating portion formed in a peripheral region of the photosensitive element region, wherein the first light concentrating portion is formed such that to the light entering the peripheral region of the photosensitive element is refracted toward the photosensitive element region through the light concentrating portion. The image sensor and method for forming an image sensor of the present disclosure allow more light to enter the area of the photosensitive element in the substrate, thereby improving the light sensitivity of the image sensor.

Abstract: The present disclosure relates to an image sensor comprising: a photodiode; a color filter located above the photodiode; and a converging lens located between the photodiode and the color filter, wherein the converging lens is configured to converge light onto the photodiode. The image sensor can make the configuration of the image sensor more compact while preventing crosstalk of light between pixel cells.

Abstract: A back-side illumination CMOS image sensor and a method forming it are described. A first refraction layer, a reflection layer, and a second refraction layer are deposited in the dielectric layer around the isolation trench between pixels in the image sensor. The refractive index of the second refraction layer is smaller than the refractive index of a dielectric layer to reduce the refraction of light due to total reflection. And a small amount of light refracted by the second refraction layer is reflected back to the second refraction layer the reflection layer, and thus this part of light is collected to a photodiode region to prevent the light cross-talk to an adjacent photodiode. More photons are absorbed resulting in higher quantum conversion efficiency.