Patents by Inventor Haigui Yang

Haigui Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device
    Patent number: 9947527
    Abstract: A method of manufacturing a semiconductor device according to the invention includes the step S1 of cleaning the silicon carbide substrate 1 surface, the step S2 of bringing a material gas into a plasma and irradiating the atoms contained in the material gas to silicon carbide substrate 1 for growing silicon nitride film 2 on silicon carbide substrate 1, the step S3 of depositing silicon oxide film 3 on silicon nitride film 2 by the ECR plasma CVD method, and the step S4 of annealing silicon carbide substrate 1 including silicon nitride film 2 and silicon oxide film 3 formed thereon in a nitrogen atmosphere. By the method of manufacturing a semiconductor device according to the invention, a semiconductor device that exhibits excellent interface properties including an interface state density and a flat band voltage is obtained.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: April 17, 2018
    Assignees: FUJI ELECTRIC CO., LTD., KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
    Inventors: Hiroshi Nakashima, Haigui Yang, Hitoshi Sumida
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20120315770
    Abstract: A method of manufacturing a semiconductor device according to the invention includes the step S1 of cleaning the silicon carbide substrate 1 surface, the step S2 of bringing a material gas into a plasma and irradiating the atoms contained in the material gas to silicon carbide substrate 1 for growing silicon nitride film 2 on silicon carbide substrate 1, the step S3 of depositing silicon oxide film 3 on silicon nitride film 2 by the ECR plasma CVD method, and the step S4 of annealing silicon carbide substrate 1 including silicon nitride film 2 and silicon oxide film 3 formed thereon in a nitrogen atmosphere. By the method of manufacturing a semiconductor device according to the invention, a semiconductor device that exhibits excellent interface properties including an interface state density and a flat band voltage is obtained.
    Type: Application
    Filed: May 21, 2012
    Publication date: December 13, 2012
    Applicants: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORP., FUJI ELECTRIC CO., LTD.
    Inventors: Hiroshi Nakashima, Haigui Yang, Hitoshi Sumida