Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: The present invention discloses a preparation method for a spherical Zn-Mn metal compound. The preparation method comprises the following steps: adding a metal ion solution to a weak acid carbon dot solution; and then, adding a sodium carbonate solution to the above solution at an oil bath while stirring to obtain a spherical Zn-Mn metal carbonate compound. The present invention proposes that using water-soluble or ethanol-soluble carbon dots as a carrier and polyvinylpyrrolidone as a surfactant to prepare the spherical Zn-Mn metal compound, a novel preparation method for the Zn-Mn metal compound is formed. The prepared material may be applied to a lithium ion battery and may further be applied to application researches in the field of synthesis of other electrochemical energy sources or photocatalytic materials.