Abstract: A bistable gripper for an aerial vehicle may include a base, a first finger, a second finger, a switching pad, a first elastic connector, and a second elastic connector. The base may include a first beam and a second beam. The first finger may be pivotably attached to the first beam at a first joint, and the second finger may be pivotably attached to the second beam at a second joint. The switching pad may be configured for moving relative to the base. The first elastic connector may be attached to the switching pad and the first finger, and the second elastic connector may be attached to the switching pad and the second finger. The bistable gripper may be configured for switching between a closed stable state and an open stable state.

Abstract: A bistable gripper for an aerial vehicle may include a base, a first finger, a second finger, a switching pad, a first elastic connector, and a second elastic connector. The base may include a first beam and a second beam. The first finger may be pivotably attached to the first beam at a first joint, and the second finger may be pivotably attached to the second beam at a second joint. The switching pad may be configured for moving relative to the base. The first elastic connector may be attached to the switching pad and the first finger, and the second elastic connector may be attached to the switching pad and the second finger. The bistable gripper may be configured for switching between a closed stable state and an open stable state.

Abstract: The invention provides a TFT substrate manufacturing method and TFT substrate. The TFT substrate manufacturing method first etches the gate insulation layer to form two first through-holes and forming two bridging metal blocks inside the two first through holes; then etches the interlayer dielectric layer to form two second through-holes connecting respectively the two first through-holes, the source and drain connecting the two bridging metal blocks respectively through the two second through-holes. By changing a conventional etching process into two etching process to form the through-hole structure on the gate insulation layer and interlayer dielectric layer, able to improve uniformity of the active layer, reduce process difficulty, avoid the problem of etching stopped due to higher etching thickness, and improve the product quality.

Abstract: The invention provides a TFT substrate manufacturing method and TFT substrate. The TFT substrate manufacturing method first etches the gate insulation layer to form two first through-holes and forming two bridging metal blocks inside the two first through holes; then etches the interlayer dielectric layer to form two second through-holes connecting respectively the two first through-holes, the source and drain connecting the two bridging metal blocks respectively through the two second through-holes. By changing a conventional etching process into two etching process to form the through-hole structure on the gate insulation layer and interlayer dielectric layer, able to improve uniformity of the active layer, reduce process difficulty, avoid the problem of etching stopped due to higher etching thickness, and improve the product quality.