Patents by Inventor Haijun LOU

Haijun LOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunnelling field effect transistor
    Patent number: 9793351
    Abstract: A tunneling field effect transistor, comprising a gate electrode layer, a gate dielectric layer, a source region, a connected region and a drain region, wherein the source region comprises a first source region and a second source region, the second source region comprising an inner layer source region and an outer layer source region. The connected region comprises an expansion region and a high-resistance region. The doping types of materials of the inner layer source and the outer layer source region are opposite, and the forbidden bandwidth of the material of the inner layer source region is less than that of the outer layer source region. The contact surface formed by way of covering the inner layer source region by the outer layer source region is a curved surface.
    Type: Grant
    Filed: September 1, 2014
    Date of Patent: October 17, 2017
    Assignee: Peking University Shenzhen Graduate School
    Inventors: Haijun Lou, Xinnan Lin, Dan Li, Jin He
  • TUNNELLING FIELD EFFECT TRANSISTOR
    Publication number: 20160197145
    Abstract: A tunneling field effect transistor, comprising a gate electrode layer, a gate dielectric layer, a source region, a connected region and a drain region, wherein the source region comprises a first source region and a second source region, the second source region comprising an inner layer source region and an outer layer source region. The connected region comprises an expansion region and a high-resistance region. The doping types of materials of the inner layer source and the outer layer source region are opposite, and the forbidden bandwidth of the material of the inner layer source region is less than that of the outer layer source region. The contact surface formed by way of covering the inner layer source region by the outer layer source region is a curved surface.
    Type: Application
    Filed: September 1, 2014
    Publication date: July 7, 2016
    Applicant: PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL
    Inventors: Haijun LOU, Xinnan LIN, Dan LI, Jin HE