Patents by Inventor Haike Dong

Haike Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Source side programming
    Patent number: 7154141
    Abstract: A flash EEPROM array having a double-diffused source junction that can be used for source side programming. The flash EEPROM array, when programmed from the source side exhibits fast programming rates. Additionally, source side programming of arrays having different physical characteristics (e.g. transistor cell channel length) exhibit tighter program rate distributions than for the same arrays in which drain side programming is used.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: December 26, 2006
    Assignee: Hyundai Electronics America
    Inventors: Hsingya Arthur Wang, Yuan Tang, Haike Dong, Ming Sang Kwan, Peter Rabkin
  • Source side programming
    Publication number: 20020105036
    Abstract: A flash EEPROM array having a double-diffused source junction that can be used for source side programming. The flash EEPROM array, when programmed from the source side exhibits fast programming rates. Additionally, source side programming of arrays having different physical characteristics (e.g. transistor cell channel length) exhibit tighter program rate distributions than for the same arrays in which drain side programming is used.
    Type: Application
    Filed: February 2, 2001
    Publication date: August 8, 2002
    Inventors: Hsingya Arthur Wang, Yuan Tang, Haike Dong, Ming Sang Kwan, Peter Rabkin
  • Method and apparatus for bulk preprogramming flash memory cells with minimal source and drain currents
    Patent number: 5920506
    Abstract: Apparatus is provided to facilitate the process of bulk preprogramming each of the cells in a flash memory or a subblock of a flash memory. In the process, the source and drain of each cell to be preprogrammed is biased such that current need not be flowing between the source and drain through the cell's channel region for charge to be transferred between the cell's channel region and the cell's floating gate. In a specific embodiment, the sources and drains are left floating without any particular bias voltage and the control gates of the cells are set to between 9 and 12 volts above the substrate and held there for about 10 milliseconds (ms). In an alternate embodiment, the sources and drains of all of the cells to be preprogrammed are biased to the same potential, which is a negative voltage, ground, or a positive voltage.
    Type: Grant
    Filed: September 26, 1997
    Date of Patent: July 6, 1999
    Assignee: Hyundai Electronics America, Inc.
    Inventors: Hsingya Arthur Wang, Haike Dong, Jein-Chen Young, Yuan Tang, Aaron Yip, Kenneth Miu