Abstract: An ESD protection device for bidirectional diode string triggering SCR structure belongs to the field of electro-static discharge of an integrated circuit. A deep N well is arranged on a P substrate, and a first P well, a first N well, a second P well and a second N well are successively arranged from left to right on a surface region of the deep N well. In a second N well region, a mask preparing plate is used to insert the P wells at intervals. The circumference of each P well is isolated by the N well. Each P well is respectively provided with a pair of P+ implantation region and N+ implantation region. The metal wire is connected with the implantation region, and a positive electrode and a negative electrode are led out from the metal wire for forward conduction and reverse conduction.

Abstract: An ESD protection device for bidirectional diode string triggering SCR structure belongs to the field of electro-static discharge of an integrated circuit. A deep N well is arranged on a P substrate, and a first P well, a first N well, a second P well and a second N well are successively arranged from left to right on a surface region of the deep N well. In a second N well region, a mask preparing plate is used to insert the P wells at intervals. The circumference of each P well is isolated by the N well. Each P well is respectively provided with a pair of P+ implantation region and N+ implantation region. The metal wire is connected with the implantation region, and a positive electrode and a negative electrode are led out from the metal wire for forward conduction and reverse conduction.

Abstract: The present invention provides an embedded high voltage LDMOS-SCR device with strong voltage clamp and ESD robustness, which can be used as the on-chip ESD protection for high voltage IC. Wherein said the device comprises a P substrate, a P well, a N well, a first field oxide isolation region, a first P+ injection region, a second field oxide isolation region, a first N+ injection region, a first fin polysilicon gate, a second N+ injection region, a second fin polysilicon gate, a third N+ injection region, a third fin polysilicon gate, a polysilicon gate, a fourth fin polysilicon gate, a second P+ injection region, a fifth fin polysilicon gate, a third P+ injection region, a sixth fin polysilicon gate, a fourth P+ injection region, a third oxygen isolation region, a fourth N+ injection region and a fourth field oxygen isolation region.

Abstract: The present invention provides an embedded high voltage LDMOS-SCR device with strong voltage clamp and ESD robustness, which can be used as the on-chip ESD protection for high voltage IC. Wherein said the device comprises a P substrate, a P well, a N well, a first field oxide isolation region, a first P+ injection region, a second field oxide isolation region, a first N+ injection region, a first fin polysilicon gate, a second N+ injection region, a second fin polysilicon gate, a third N+ injection region, a third fin polysilicon gate, a polysilicon gate, a fourth fin polysilicon gate, a second P+ injection region, a fifth fin polysilicon gate, a third P+ injection region, a sixth fin polysilicon gate, a fourth P+ injection region, a third oxygen isolation region, a fourth N+ injection region and a fourth field oxygen isolation region.