Patents by Inventor Hailin Han

Hailin Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protection circuit for an RF power amplifier
    Patent number: 10263571
    Abstract: An RF PA and an RF PA protection circuit are disclosed according to one embodiment of the present disclosure. The RF PA includes an RF PA bias circuit and an RF PA transistor element. The RF PA transistor element has a first current terminal and a control terminal. The RF PA protection circuit is coupled between the RF PA bias circuit and the first current terminal. The RF PA protection circuit reduces a current through the first current terminal using the RF PA bias circuit when a magnitude of a voltage at the first current terminal exceeds a protection threshold.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: April 16, 2019
    Assignee: Qorvo US, Inc.
    Inventors: Hailin Han, Steven Alexander Brown, Christopher Robert Moll, Stephen P. Bachhuber, Robert Edwin Knapp
  • PROTECTION CIRCUIT FOR AN RF POWER AMPLIFIER
    Publication number: 20180013392
    Abstract: An RF PA and an RF PA protection circuit are disclosed according to one embodiment of the present disclosure. The RF PA includes an RF PA bias circuit and an RF PA transistor element. The RF PA transistor element has a first current terminal and a control terminal. The RF PA protection circuit is coupled between the RF PA bias circuit and the first current terminal. The RF PA protection circuit reduces a current through the first current terminal using the RF PA bias circuit when a magnitude of a voltage at the first current terminal exceeds a protection threshold.
    Type: Application
    Filed: July 7, 2017
    Publication date: January 11, 2018
    Inventors: Hailin Han, Steven Alexander Brown, Christopher Robert Moll, Stephen P. Bachhuber, Robert Edwin Knapp
  • Split biased radio frequency power amplifier with enhanced linearity
    Patent number: 9077296
    Abstract: A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.
    Type: Grant
    Filed: August 5, 2013
    Date of Patent: July 7, 2015
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Hailin Han, Ezio Perrone
  • SPLIT BIASED RADIO FREQUENCY POWER AMPLIFIER WITH ENHANCED LINEARITY
    Publication number: 20150035601
    Abstract: A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.
    Type: Application
    Filed: August 5, 2013
    Publication date: February 5, 2015
    Applicant: TriQuint Semiconductor, Inc.
    Inventors: Hailin Han, Ezio Perrone