Patents by Inventor Hailin Luo

Hailin Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040036146
    Abstract: A phototransistor comprises a layer having two n-type semiconductor regions which constitute an emitter region and a collector region, and which sandwich a lightly doped p-type base region. In operating conditions the base region is completely depleted leading to punchthrough, and generation of high optical conversion gain when the phototransistor is illuminated. The base region and part of the emitter and collector regions are covered with an oxide layer. The phototransistor can be fabricated by CMOS processing technology, so very large scale integrated circuits can be fabricated comprising a large number of the phototransistors.
    Type: Application
    Filed: June 3, 2003
    Publication date: February 26, 2004
    Applicant: The Hong Kong University of Science and Technology
    Inventors: Yuqi Wang, Hailin Luo, Yuchhun Chang, Jiannong Wang, Weikun Ge
  • Publication number: 20030087466
    Abstract: A phototransistor comprises a layer having two n-type semiconductor regions which constitute an emitter region and a collector region, and which sandwich a lightly doped p-type base region. In operating conditions the base region is completely depleted leading to punchthrough, and generation of high optical conversion gain when the phototransistor is illuminated. The base region and part of the emitter and collector regions are covered with an oxide layer. The phototransistor can be fabricated by CMOS processing technology, so very large scale integrated circuits can be fabricated comprising a large number of the phototransistors.
    Type: Application
    Filed: November 6, 2001
    Publication date: May 8, 2003
    Inventors: Yuqi Wang, Hailin Luo, Yuchhun Chang, Jiannong Wang, Weikun Ge