Patents by Inventor Hai-Lin Sun
Hai-Lin Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8895841Abstract: A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.Type: GrantFiled: December 19, 2008Date of Patent: November 25, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 8796537Abstract: A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode. The back electrode is located on and electrically connected to a lower surface of the silicon substrate. A number of cavities are formed on an upper surface of the silicon substrate. The doped silicon layer is located on the inside surface of the cavities. The upper electrode is located on the upper surface of the silicon substrate. The upper electrode includes a carbon nanotube structure.Type: GrantFiled: December 19, 2008Date of Patent: August 5, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 8608849Abstract: A method for making zinc oxide nano-structure, the method includes the following steps. Firstly, providing a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, providing a growing substrate and forming a metal layer thereon. Thirdly, depositing a catalyst layer on the metal layer. Fourthly, placing the growing substrate into the reacting room together with a quantity of zinc source material. Fifthly, introducing a oxygen-containing gas into the reacting room. Lastly, heating the reacting room to a temperature range of 500˜1100° C.Type: GrantFiled: September 29, 2008Date of Patent: December 17, 2013Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 8603304Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.Type: GrantFiled: August 17, 2012Date of Patent: December 10, 2013Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 8349146Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.Type: GrantFiled: November 6, 2008Date of Patent: January 8, 2013Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20120315761Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.Type: ApplicationFiled: August 17, 2012Publication date: December 13, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: HAI-LIN SUN, KAI-LI JIANG, QUN-QING LI, SHOU-SHAN FAN
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Patent number: 8263860Abstract: A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate.Type: GrantFiled: December 19, 2008Date of Patent: September 11, 2012Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 8197598Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.Type: GrantFiled: November 6, 2008Date of Patent: June 12, 2012Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 8119089Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.Type: GrantFiled: November 6, 2008Date of Patent: February 21, 2012Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Patent number: 7888271Abstract: A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.Type: GrantFiled: November 6, 2008Date of Patent: February 15, 2011Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20110008237Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.Type: ApplicationFiled: November 6, 2008Publication date: January 13, 2011Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.Inventor: Hai-Lin Sun
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Patent number: 7638112Abstract: A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.Type: GrantFiled: November 6, 2008Date of Patent: December 29, 2009Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20090260679Abstract: A photovoltaic device includes a substrate, a doped layer, a first electrode and a second electrode. The substrate has a plurality of cavities defined therein. The doped layer is in contact the substrate. The first electrode including a carbon nanotube composite material is adjacent to the substrate. The second electrode is attached to the substrate.Type: ApplicationFiled: December 19, 2008Publication date: October 22, 2009Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: HAI-LIN SUN, KAI-LI JIANG, QUN-QING LI, SHOU-SHAN FAN
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Publication number: 20090260688Abstract: A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.Type: ApplicationFiled: December 19, 2008Publication date: October 22, 2009Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20090257947Abstract: A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.Type: ApplicationFiled: November 6, 2008Publication date: October 15, 2009Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20090258163Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.Type: ApplicationFiled: November 6, 2008Publication date: October 15, 2009Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20090250113Abstract: A solar cell includes a back electrode, a single crystal silicon substrate, and a carbon nanotube structure. The single crystal silicon substrate includes an upper surface and a lower surface. The back electrode is located on and electrically connected to the lower surface of the single crystal silicon substrate. The carbon nanotube structure is located on and connected to the upper surface of the single crystal silicon substrate. The carbon nanotube structure includes an upper surface and a lower surface.Type: ApplicationFiled: December 19, 2008Publication date: October 8, 2009Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: HAI-LIN SUN, KAI-LI JIANG, QUN-QING LI, SHOU-SHAN FAN
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Publication number: 20090253247Abstract: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600-1200° C.Type: ApplicationFiled: November 6, 2008Publication date: October 8, 2009Applicants: Tsinghua University, HON HAI Precision Industry CO.,LTD.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20090253248Abstract: A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.Type: ApplicationFiled: November 6, 2008Publication date: October 8, 2009Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20090250114Abstract: A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate.Type: ApplicationFiled: December 19, 2008Publication date: October 8, 2009Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Hai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan