Patents by Inventor Hailong Zhou

Hailong Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10504931
    Abstract: A fan-out line component, a display device comprising the same, and a fan-out line wiring method are disclosed. The fan-out line component is used for signal connection between a first functional region and a second functional region. A channel in an intermediate section of a channel wire outlet end of the first functional region is a dummy channel. A first wiring from an effective signal channel in the first functional region which is closest to the dummy channel to the second functional region extends to a central normal region of the dummy channel, and then extends in the central normal region along a direction of a central normal.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: December 10, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yan Zhou, Dalong Mao, Yi Dan, Hailong Wu
  • Patent number: 10497567
    Abstract: Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the gate material is provided. The method includes (a) exposing a cobalt mask layer to a fluorine-containing gas mixture in a first mode to form a passivation film on the cobalt mask layer. The cobalt mask layer exposes a portion of a gate material disposed on a substrate. The method further comprises (b) exposing the portion of the gate material to an etching gas mixture in a second mode to etch the portion of the gate material. The portion of the gate material is etched through openings defined in the cobalt mask layer and the portion of the gate material is etched at a greater rate than the cobalt mask layer having the passivation layer disposed thereon.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: December 3, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hailong Zhou, Yangchung Lee, Chain Lee, Hui Sun, Jonathan Sungehul Kim
  • Patent number: 10497578
    Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: December 3, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Hailong Zhou, Gene Lee, Abhijit Patil, Shan Jiang, Akhil Mehrotra, Jonathan Kim
  • Publication number: 20190295461
    Abstract: A display panel and a terminal are provided. The display panel includes a light-emitting module, and scanning lines, data lines, and power lines which are electrically connected to the light-emitting module. Each of the power lines extends along a short side direction of the display panel, a number of power lines are arranged spaced apart along a long side direction of the display panel.
    Type: Application
    Filed: June 14, 2019
    Publication date: September 26, 2019
    Applicant: Yungu (Gu'an) Technology Co., Ltd.
    Inventors: Xiaokang ZHOU, Mengzhen LI, Hui PANG, Yangjie ZHU, Hailong XU
  • Publication number: 20190269746
    Abstract: Disclosed is a hepatoprotective traditional Chinese medicine composition and a preparation method and use thereof. The composition is prepared by Fructus Ligustri Lucidi, Herba Ecliptae, Radix Paeoniae Alba, Rhizoma Curcumae Longae and clam. The present invention utilizes Fructus Ligustri Lucidi and Herba Ecliptae to nourish the liver blood, Radix Paeoniae Alba and Rhizoma Curcumae Longae to invigorate the liver qi circulation, and clam to detoxify the liver. It combines several medicines to nourish the liver, smooth the liver qi and achieves a liver nourishing and protective efficacy, and is applicable to the population suffering from liver injury caused by an unhealthy lifestyle. The composition is characterized in using Fructus Ligustri Lucidi, Herba Ecliptae, Radix Paeoniae Alba, Rhizoma Curcumae Longae and clam as main raw materials. It combines various components reasonably, uses them in conjunction, and achieves a health-care function via multiple means and at multiple levels.
    Type: Application
    Filed: May 15, 2019
    Publication date: September 5, 2019
    Applicant: INFINITUS (CHINA) COMPANY LTD.
    Inventors: Yong ZHOU, Hailong LI, Xiaolei GUO, Chung Wah MA
  • Patent number: 10373830
    Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: August 6, 2019
    Assignee: Ostendo Technologies, Inc.
    Inventors: Hussein S. El-Ghoroury, Minghsuan Liu, Kameshwar Yadavalli, Weilong Tang, Benjamin A. Haskell, Hailong Zhou
  • Patent number: 10370774
    Abstract: A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: August 6, 2019
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Xiangfeng Duan, Hailong Zhou
  • Patent number: 10321553
    Abstract: An apparatus is described for suppressing EMI emissions in an electrical device. In one example, the apparatus includes absorbing material surrounding at least a portion of an electrical component and electrically conductive material configured to contact at least one side of the absorbing material.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: June 11, 2019
    Assignee: CISCO TECHNOLOGY, INC.
    Inventors: Hailong Zhang, Xiaoxia Zhou, Jinghan Yu, Philippe Sochoux, Xiao Li, Alpesh Bhobe
  • Publication number: 20190156993
    Abstract: In one embodiment, an apparatus includes a plurality of transformers and a plurality of common mode chokes, each of the transformers and the common mode chokes comprising a magnetic core and windings wound around the magnetic core at generally opposite sides thereof. The transformers and common mode chokes are arranged in an array with the windings on each of the magnetic cores positioned generally orthogonal to the windings of adjacent magnetic cores in the array to reduce crosstalk and improve common mode noise rejection.
    Type: Application
    Filed: November 21, 2017
    Publication date: May 23, 2019
    Applicant: CISCO TECHNOLOGY, INC.
    Inventors: Jianquan Lou, Xiaoxia Zhou, Hailong Zhang, Yingchun Shu, Alpesh U. Bhobe
  • Publication number: 20190043723
    Abstract: Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the gate material is provided. The method includes (a) exposing a cobalt mask layer to a fluorine-containing gas mixture in a first mode to form a passivation film on the cobalt mask layer. The cobalt mask layer exposes a portion of a gate material disposed on a substrate. The method further comprises (b) exposing the portion of the gate material to an etching gas mixture in a second mode to etch the portion of the gate material. The portion of the gate material is etched through openings defined in the cobalt mask layer and the portion of the gate material is etched at a greater rate than the cobalt mask layer having the passivation layer disposed thereon.
    Type: Application
    Filed: July 16, 2018
    Publication date: February 7, 2019
    Inventors: Hailong ZHOU, Yangchung LEE, Chain LEE, Hui SUN, Jonathan Sungehul KIM
  • Publication number: 20180337047
    Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device substrate is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device substrate comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.
    Type: Application
    Filed: May 18, 2018
    Publication date: November 22, 2018
    Inventors: Nancy FUNG, Gene LEE, Hailong ZHOU, Zohreh HESABI, Akhil MEHROTRA, Shan JIANG, Abhijit PATIL, Chi-I LANG, Larry GAO
  • Publication number: 20180025914
    Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process.
    Type: Application
    Filed: July 22, 2016
    Publication date: January 25, 2018
    Inventors: Hailong ZHOU, Gene LEE, Abhijit PATIL, Shan JIANG, Akhil MEHROTRA, Jonathan KIM
  • Publication number: 20170263457
    Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).
    Type: Application
    Filed: March 7, 2017
    Publication date: September 14, 2017
    Inventors: Hussein S. El-Ghoroury, Minghsuan Liu, Kameshwar Yadavalli, Weilong Tang, Benjamin A. Haskell, Hailong Zhou
  • Patent number: 9595451
    Abstract: Methods for forming high aspect ratio features using an etch process are provided. In one embodiment, a method for etching a dielectric layer to form features in the dielectric layer includes (a) supplying an etching gas mixture during a first mode to etch a portion of a dielectric layer disposed on a substrate while forming a passivation protection in the dielectric layer, wherein the dielectric layer is etched through openings defined in a patterned mask layer disposed on the dielectric layer, (b) supplying an etching gas mixture during a second mode to continue forming the passivation protection in the dielectric layer without etching the dielectric layer, and repeatedly performing (a) and (b) to form features in the dielectric layer until a surface of the substrate is exposed.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: March 14, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Hailong Zhou, Gene Lee, Liming Yang
  • Publication number: 20150337458
    Abstract: A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar.
    Type: Application
    Filed: January 8, 2014
    Publication date: November 26, 2015
    Inventors: Xiangfeng Duan, Hailong Zhou
  • Patent number: 8257999
    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: September 4, 2012
    Assignee: National University of Singapore
    Inventors: Soo Jin Chua, Hailong Zhou, Jianyi Lin, Hui Pan
  • Publication number: 20120018699
    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.
    Type: Application
    Filed: May 20, 2011
    Publication date: January 26, 2012
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Soo Jin Chua, Hailong Zhou, Jianyi Lin, Hui Pan
  • Patent number: 7951639
    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: May 31, 2011
    Assignee: National University of Singapore
    Inventors: Soon Jin Chua, Hailong Zhou, Jianyi Lin, Hui Pan
  • Publication number: 20100102307
    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.
    Type: Application
    Filed: October 24, 2008
    Publication date: April 29, 2010
    Inventors: Soon Jin Chua, Hailong Zhou, Jianyi Lin, Hui Pan
  • Publication number: 20090003402
    Abstract: A laser includes a Ti:sapphire gain-element that is optically pumped by radiation from a semiconductor laser device. In one example the semiconductor laser device is an InGaN diode-laser array and the gain-element is optically pumped by radiation emitted by that array. In another example, the semiconductor laser device is an optically pumped semiconductor laser (OPS-laser) optically pumped by radiation from an InGaN diode-laser array. In a further example the semiconductor device is an intracavity frequency-doubled OPS laser.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 1, 2009
    Inventors: Joris Van Nunen, Hailong Zhou, H. Yang Pang