Patents by Inventor Haimiao LI

Haimiao LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12241845
    Abstract: The present invention provides a method for detecting surface haze of materials, comprising: optionally, preliminary inspection, which is conducted on materials, to identify the materials with no visible surface defects; and surface haze inspection, to detect the surface haze of the materials; wherein an optical filter module is configured in surface haze inspection setup to filter off the photoluminescence signal of the materials in the light path to the detector, so as to avoid the photoluminescence signal being detected by the detector. The invention further provides a setup for detecting surface haze of materials. By using the invented method and setup for detecting surface haze, it is possible to accurately obtain the surface haze value and/or distribution of the materials.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: March 4, 2025
    Assignee: Beijing Tongmei Xtal Technology Co., Ltd.
    Inventors: Wei Gao, Yu Liu, Zhizhen Wang, Haimiao Li
  • Publication number: 20230341336
    Abstract: The present invention provides a method for detecting surface haze of materials, comprising: optionally, preliminary inspection, which is conducted on materials, to identify the materials with no visible surface defects; and surface haze inspection, to detect the surface haze of the materials; wherein an optical filter module is configured in surface haze inspection setup to filter off the photoluminescence signal of the materials in the light path to the detector, so as to avoid the photoluminescence signal being detected by the detector. The invention further provides a setup for detecting surface haze of materials. By using the invented method and setup for detecting surface haze, it is possible to accurately obtain the surface haze value and/or distribution of the materials.
    Type: Application
    Filed: December 22, 2021
    Publication date: October 26, 2023
    Inventors: Wei Gao, Yu Liu, Zhizhen Wang, Haimiao Li
  • Publication number: 20230202453
    Abstract: The disclosure relates to the field of vehicle technologies, and specifically, to a vehicle control method and system, a vehicle, a control apparatus, a vehicle-mounted device, and a computer-readable storage medium. The disclosure aims to solve the following technical problem: Since a distinction between understeering and oversteering conditions is not taken into consideration when increasing the engine torque, there is still room for improvement in a formulated engine torque increasing strategy. For this purpose, the disclosure provides a vehicle control method and system, a vehicle, a control apparatus, a vehicle-mounted device, and a computer-readable storage medium, where the control method includes: when an abnormal state occurs in a vehicle in a steering condition, determining whether the current abnormal state is understeering or oversteering; and adjusting torque of the vehicle based on a determining result and a torque amount adjustment mechanism predetermined for the current abnormal state.
    Type: Application
    Filed: October 25, 2022
    Publication date: June 29, 2023
    Inventors: Ze LIU, Haimiao LI, Hongchao ZHANG, Baihong XIAO, Da YUAN
  • Patent number: 11376703
    Abstract: A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: July 5, 2022
    Inventors: Liugang Wang, Haimiao Li, Sung-Nee George Chu
  • Publication number: 20210370459
    Abstract: A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.
    Type: Application
    Filed: June 29, 2018
    Publication date: December 2, 2021
    Inventors: Liugang WANG, Haimiao LI, Sung-Nee George CHU
  • Patent number: 11094549
    Abstract: A {100} indium phosphide (InP) wafer with pits distributed on the back side thereof, a method and an etching solution for manufacturing thereof are provided, wherein the pits on the back side have an elongated shape with a maximum dimension of the long axis of 65 ?m, and the pits have a maximum depth of 6.0 ?m. The {100} indium phosphide (InP) wafer has controllable pits distribution on the back side, thus provide a controllable emissivity of the wafer back side surface for better control of wafer back side heating during the epitaxial growth.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: August 17, 2021
    Assignee: BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
    Inventors: Liugang Wang, Haimiao Li, Sung-Nee George Chu
  • Publication number: 20200227268
    Abstract: A {100} indium phosphide (InP) wafer with pits distributed on the back side thereof, a method and an etching solution for manufacturing thereof are provided, wherein the pits on the back side have an elongated shape with a maximum dimension of the long axis of 65 ?m, and the pits have a maximum depth of 6.0 ?m. The {100} indium phosphide (InP) wafer has controllable pits distribution on the back side, thus provide a controllable emissivity of the wafer back side surface for better control of wafer back side heating during the epitaxial growth.
    Type: Application
    Filed: June 29, 2018
    Publication date: July 16, 2020
    Inventors: Liugang WANG, Haimiao LI, Sung-Nee George CHU