Abstract: An Imaging-activated cell sorter (IACS) provides spatial resolution to facilitate single EVs sorting based on fluorescence markers. The imaging is used to detect if the fluorescence (FL) signal is located in a single spot or is in multiple spots (e.g., a swarm). The images can be a single image, or multiple spatially registered FL images.

Abstract: The single cell identification described herein utilizes cell image information and extracts cell features with a neural network model to subtly distinguish the noise events from single cells, allowing the user to choose which different types of noise events to exclude depending on the requirement of applications. The fast neural network model is able to extract more abundant and specific cell features than handpicked features, which enables the model to be equipped with higher accuracy and higher discriminative capability of distinguishing noise events and identifying the single cells in real-time. Utilization of a neural network model for real-time single cell identification represents a novel technique never applied before. It allows high discriminative capability and high accuracy compared to traditional FACS (Fluorescence-activated Cell Sorting).

Abstract: An Image Activated Cell Sorting (IACS) classification workflow includes: employing a neural network-based feature encoder (or extractor) to extract features of cell images; automatically clustering cells based on extracted cell features; identifying a cluster to pick which cluster(s) to sort based on the cell images; fine-tuning a classification network based on the cluster(s) selected; and once refined, the classification network is used to sort cells for real-time live sorting.

Abstract: A semiconductor visible laser with broadband emission and reduced speckling is provided. Conventional lasers with narrow spectral emission cause undesired speckles. The invention reduces laser speckles by producing a broadband laser emission. The laser comprises a multitude of quantum dot layers having quantum dots that have inhomogeneity in size, density, or composition. Methods of constructing such a laser are also provided.

Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.

Abstract: A method of growing semi-insulating GaN epilayers by ammonia-molecular beam epitaxy (MBE) through intentional doping with carbon is described. Thick GaN layers of high resistivity are an important element in GaN based heterostructure field-effect transistors. A methane ion source is preferably used as the carbon dopant source.

Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.

Abstract: A method of fabricating a gallium nitride or like epilayer on sapphire is disclosed wherein a buffer layer is grown on the sapphire substrate by magnetron sputter epitaxy (MSE); and then the gallium nitride epilayer is formed on the buffer layer, preferably by molecular beam epitaxy.