Patents by Inventor Haiqiao YE

Haiqiao YE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230416604
    Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.
    Type: Application
    Filed: September 9, 2023
    Publication date: December 28, 2023
    Inventors: Xuyong YANG, Fan CAO, Haiqiao YE, Yang LIU, Jingwen FENG
  • Patent number: 11795393
    Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: October 24, 2023
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Xuyong Yang, Fan Cao, Haiqiao Ye, Yang Liu, Jingwen Feng
  • Publication number: 20230174859
    Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.
    Type: Application
    Filed: December 30, 2020
    Publication date: June 8, 2023
    Inventors: Xuyong YANG, Fan CAO, Haiqiao YE, Yang LIU, Jingwen FENG