Abstract: Methods, devices, and systems of optical imaging simulation for a photolithography system are provided, including: determining a photolithographic imaging model based on a transmission cross coefficient and mask near-field distribution, solving a transmission cross coefficient based on a Lanczos method, using a parity operator to ensure the symmetric properties of the transmission cross coefficient in the numerical solution process to obtain a characteristic kernel functions of the transmission cross coefficient, and solving a photolithographic imaging model by combining the mask near-field distribution and each characteristic kernel function, and obtaining an aerial image of the mask by simulation. The methods, devices, and systems provided can prevent symmetry breaking caused by floating-point errors and improve simulation efficiency as well as simulation precision of a photolithographic imaging system.

Abstract: The present invention provides a method and a system for pixelating a vector graphic into an image. First, a vector graphic defined by an arbitrary curve boundary is approximated as a vector graphic of a Manhattan structure, and then a fast algorithm is used to pixelate the approximate Manhattan vector graphic into a two-dimensional image. A process of moving quadrant planes to superimpose on vertices of the vector graphic is replaced with convolution of an image resulting from a template rectangle image and Dirac pulse functions of the vertices of the vector graphic, and a pixelated image of this vector graphic is obtained through convolution of the template rectangle and a sparse image composed of Dirac pulses located at the positions of the vertices of the vector graphic.

Abstract: Light source calibration methods and systems employed in source mask optimization are provided. The method includes: initializing a light source pattern and a mask pattern; using an SMO algorithm to iteratively optimize the light source pattern and the mask pattern; using a pre-established light source error correction model to correct the light source pattern after each iterative optimization, and updating the light source pattern after each iterative optimization with a corrected light source pattern in a current iteration process. The light source error correction model is established according to an input and output data set consisting of an input target light source pattern and an output actual light source pattern of a PIS. The method includes determining, according to an evaluation criterion or a condition of convergence of iteration of the SMO algorithm, whether the optimization meets a requirement.

Abstract: Methods and systems of photolithographic mask optimization without border defects are provided. Two sets of meshes of odd splitting and even splitting performed in a staggered manner are used to obtain slices, and the mask patterns of the slices obtained by the odd splitting and even splitting are corrected once in sequence in a single iteration process. The iteration process is executed circularly until all slices meet the requirements on error, so as to eliminate the impact of a boundary effect. The two sets of splitting meshes consist of different partitions, thereby avoiding the problem of border defects caused by single splitting of a mask layout of a traditional mask optimization method.

Abstract: Disclosed in the invention are a method and system for modeling, calibration, and simulation of a multi-stage series photoresist characterization network, pertaining to the field of semiconductor lithography. The invention comprises: firstly dividing a photoresist reaction process into several key stages, using a new idea of modeling a multi-stage series system network, constructing multiple stages of series Wiener-Padé form sub-cascading modules according to characteristics of lithography processes, and utilizing a joint calibration strategy based on a constrained quadratic convex optimization algorithm to provide a simulation means based on library matching and low-order multivariate polynomial equivalence of model parameters.

Abstract: Methods and systems of Monte Carlo quantum computing are disclosed for simulating quantum systems and implementing quantum computing efficiently on a classical computer, including methods and systems for simulating many-variable signed densities, methods and systems for decomposing a many-variable density into a combination of few-variable signed densities, and methods and systems for solving a computational problem via Monte Carlo quantum computing.

Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

Abstract: Monte Carlo methods are described for efficiently simulating a separately frustration-free Hamiltonian of a many-body quantum system on a classical computer. Also disclosed are methods for designing a separately frustration-free Hamiltonian to simulate a prescribed quantum system. Further described are methods for solving a prescribed computational problem by designing a quantum system having a separately frustration-free Hamiltonian and simulating the designed quantum system via Monte Carlo on a classical computer.

Abstract: A method of simulating a pattern to be imaged onto a substrate using a photolithography system, the method includes obtaining a pattern to be imaged onto the substrate, smoothing the pattern, and simulating an image of the smoothed pattern. The smoothing may include application of a graphical low pass filter and the simulating may include application of edge filters from an edge filter library.

Abstract: A computer-implemented method includes modeling, using the computer, a photoresist profile in accordance with a magnitude of a gradient of an inhibitor concentration disposed in the photoresist. The photoresist is used during a process to form an integrated circuit. In one embodiment, the computer-implemented method further includes applying the modeled photoresist profile to reduce a distortion in a printed photoresist pattern caused by a response of the photoresist to an electromagnetic wave and/or particle beam during the process.

Abstract: A computer-implemented method includes characterizing, using the computer, a photoresist profile in accordance with a magnitude of a gradient of an inhibitor concentration disposed in the photoresist.

Abstract: A method of fabricating integrated circuits is described. A multi-material hard mask is formed on an underlying layer to be patterned. In a first patterning process, portions of the first material of the hard mask are etched, the first patterning process being selective to etch the first material over the second material. In a second patterning process, portions of the second material of the hard mask are etched, the second patterning process being selective to etch the second material over the first material. The first and second patterning processes forming a desired pattern in the hard mask which is then transferred to the underlying layer.

Abstract: A computer-aided learning system with adaptive optimization is disclosed.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var, zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.

Abstract: Methods, systems, and related computer program products for photolithographic process simulation are disclosed. In one preferred embodiment, a resist processing system is simulated according to a Wiener nonlinear model thereof in which a plurality of precomputed optical intensity distributions corresponding to a respective plurality of distinct elevations in an optically exposed resist film are received, each optical intensity distribution is convolved with each of a plurality of predetermined Wiener kernels to generate a plurality of convolution results, and at least two of the convolution results are multiplied to produce at least one cross-product. A weighted summation of the plurality of convolution results and the at least one cross-product is computed using a respective plurality of predetermined Wiener coefficients to generate a Wiener output, and a resist processing system simulation result is generated based at least in part on the Wiener output.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var, zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.

Abstract: An optical communications link is described, comprising first and second fiber lines in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile (oppositely signed) and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line. For other described embodiments, the first and second fiber lines are in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line.

Abstract: Methods, systems, and related computer program products for photolithographic process simulation are disclosed. In one preferred embodiment, a resist processing system is simulated according to a Wiener nonlinear model thereof in which a plurality of precomputed optical intensity distributions corresponding to a respective plurality of distinct elevations in an optically exposed resist film are received, each optical intensity distribution is convolved with each of a plurality of predetermined Wiener kernels to generate a plurality of convolution results, and at least two of the convolution results are multiplied to produce at least one cross-product. A weighted summation of the plurality of convolution results and the at least one cross-product is computed using a respective plurality of predetermined Wiener coefficients to generate a Wiener output, and a resist processing system simulation result is generated based at least in part on the Wiener output.

Abstract: Methods, systems, and related computer program products for photolithographic process simulation are disclosed. In one preferred embodiment, a resist processing system is simulated according to a Wiener nonlinear model thereof in which a plurality of precomputed optical intensity distributions corresponding to a respective plurality of distinct elevations in an optically exposed resist film are received, each optical intensity distribution is convolved with each of a plurality of predetermined Wiener kernels to generate a plurality of convolution results, and at least two of the convolution results are multiplied to produce at least one cross-product. A weighted summation of the plurality of convolution results and the at least one cross-product is computed using a respective plurality of predetermined Wiener coefficients to generate a Wiener output, and a resist processing system simulation result is generated based at least in part on the Wiener output.