Abstract: Pixels in an organic light-emitting diode (OLED) display may be microcavity OLED pixels having optical cavities. The optical cavities may be defined by a partially transparent cathode layer and a reflective anode structure. The anode of the pixels may include both the reflective anode structure and a supplemental anode that is transparent and that is used to tune the thickness of the optical cavity for each pixel. Organic light-emitting diode layers may be formed over the pixels and may have a uniform thickness in each pixel in the display. Pixels may have a conductive spacer between a transparent anode portion and a reflective anode portion, without an intervening dielectric layer. The conductive spacer may be formed from a material such as titanium nitride that is compatible with both anode portions. The transparent anode portions may have varying thicknesses to control the thickness of the optical cavities of the pixels.

Abstract: To extract light from a light-emitting diode (and thereby improve efficiency of the display), a microlens stack may be formed over the light-emitting diode. The microlens stack may include an array of microlenses that is covered by an additional single microlens. Having stacked microlenses in this way increases lens power without increasing the thickness of the display. The array of microlenses may be formed from an inorganic material whereas the additional single microlens may be formed from an organic material. The additional single microlens may conform to the upper surfaces of the array of microlenses. An additional low-index layer may be interposed between the light-emitting diode and the array of microlenses. A diffusive layer may be formed around the light-emitting diode to capture light emitted from the light-emitting diode sidewalls.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have an undercut to disrupt continuity of some but not all of the OLED layers. The undercut may be defined by three discrete portions of the pixel definition layer. The undercut may result in a void that is interposed between different portions of the OLED layers to break a leakage path formed by the OLED layers.

Abstract: Pixels in an organic light-emitting diode (OLED) display may be microcavity OLED pixels having optical cavities. The optical cavities may be defined by a partially transparent cathode layer and a reflective anode structure. The anode of the pixels may include both the reflective anode structure and a supplemental anode that is transparent and that is used to tune the thickness of the optical cavity for each pixel. Organic light-emitting diode layers may be formed over the pixels and may have a uniform thickness in each pixel in the display. Pixels may have a conductive spacer between a transparent anode portion and a reflective anode portion, without an intervening dielectric layer. The conductive spacer may be formed from a material such as titanium nitride that is compatible with both anode portions. The transparent anode portions may have varying thicknesses to control the thickness of the optical cavities of the pixels.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have an undercut to disrupt continuity of some but not all of the OLED layers. The undercut may be defined by three discrete portions of the pixel definition layer. The undercut may result in a void that is interposed between different portions of the OLED layers to break a leakage path formed by the OLED layers.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have a steep sidewall, a sidewall with an undercut, or a sidewall surface with a plurality of curves to disrupt continuity of the OLED layers. A control gate that is coupled to a bias voltage and covered by gate dielectric may be used to form an organic thin-film transistor that shuts the leakage current channel between adjacent anodes on the display.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have an undercut to disrupt continuity of some but not all of the OLED layers. The undercut may be defined by three discrete portions of the pixel definition layer. The undercut may result in a void that is interposed between different portions of the OLED layers to break a leakage path formed by the OLED layers.

Abstract: To extract light from a light-emitting diode (and thereby improve efficiency of the display), a microlens stack may be formed over the light-emitting diode. The microlens stack may include an array of microlenses that is covered by an additional single microlens. Having stacked microlenses in this way increases lens power without increasing the thickness of the display. The array of microlenses may be formed from an inorganic material whereas the additional single microlens may be formed from an organic material. The additional single microlens may conform to the upper surfaces of the array of microlenses. An additional low-index layer may be interposed between the light-emitting diode and the array of microlenses. A diffusive layer may be formed around the light-emitting diode to capture light emitted from the light-emitting diode sidewalls.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have an undercut to disrupt continuity of some but not all of the OLED layers. The undercut may be defined by three discrete portions of the pixel definition layer. The undercut may result in a void that is interposed between different portions of the OLED layers to break a leakage path formed by the OLED layers.

Abstract: Pixels in an organic light-emitting diode (OLED) display may be microcavity OLED pixels having optical cavities. The optical cavities may be defined by a partially transparent cathode layer and a reflective anode structure. The anode of the pixels may include both the reflective anode structure and a supplemental anode that is transparent and that is used to tune the thickness of the optical cavity for each pixel. Organic light-emitting diode layers may be formed over the pixels and may have a uniform thickness in each pixel in the display. Pixels may have a conductive spacer between a transparent anode portion and a reflective anode portion, without an intervening dielectric layer. The conductive spacer may be formed from a material such as titanium nitride that is compatible with both anode portions. The transparent anode portions may have varying thicknesses to control the thickness of the optical cavities of the pixels.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have an undercut to disrupt continuity of some but not all of the OLED layers. The undercut may be defined by three discrete portions of the pixel definition layer. The undercut may result in a void that is interposed between different portions of the OLED layers to break a leakage path formed by the OLED layers.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have a steep sidewall, a sidewall with an undercut, or a sidewall surface with a plurality of curves to disrupt continuity of the OLED layers. A control gate that is coupled to a bias voltage and covered by gate dielectric may be used to form an organic thin-film transistor that shuts the leakage current channel between adjacent anodes on the display.

Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Abstract: This disclosure provides systems, methods and apparatus for a stacked via having a top via structure and a bottom via structure. In one aspect, the bottom via structure includes a bottom dielectric layer and a bottom via extending through the bottom dielectric layer. The bottom via includes a bottom metal formed on the bottom dielectric layer, where the bottom via is substantially filled by a dielectric material. The top via structure includes a top dielectric layer over the bottom metal and a top via extending to a top plane of the bottom via in the top dielectric layer. The top via includes a top metal formed on the top dielectric layer, where the top metal is in electrical contact with the bottom metal at a peripheral area of the bottom via structure.

Abstract: Methods for removing titanium nitride etch by-products from process chambers are provided herein. In some embodiments, a method for the removal of titanium nitride hard mask etch by-products from a process chamber includes processing a substrate having a titanium nitride hard mask. A plasma is then formed from a cleaning gas comprising a chlorine (Cl2) containing gas in the process chamber to remove at least some of the residual titanium nitride etch by-products. In some embodiments, a method for removing titanium nitride etch by-products from process chambers includes a computer readable medium, having instructions stored thereon which, when executed by a controller, causes a process chamber having a substrate comprising a titanium nitride hard mask to be processed. A plasma is then formed from a cleaning gas comprising a chlorine containing gas in the process chamber to remove the residual titanium nitride etch by-products.

Abstract: A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

Abstract: A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.

Abstract: A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.