Patents by Inventor Haitao Xu
Haitao Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240147729Abstract: A memory can have a stacked memory array that can have a plurality of levels of memory cells. Each respective level of memory cells can be commonly coupled to a respective access line. A plurality of drivers can be above the stacked memory array. Each respective driver can have a monocrystalline semiconductor with a conductive region coupled to a respective access line.Type: ApplicationFiled: October 30, 2023Publication date: May 2, 2024Inventors: Haitao Liu, Kamal M. Karda, Gurtej S. Sandhu, Sanh D. Tang, Akira Goda, Lifang Xu
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Publication number: 20240146172Abstract: A power adapter includes a transformer, an output terminal, a secondary side circuit and a secondary side controller including an operational amplifier. The secondary side circuit includes a first switch, a second switch and a sampling resistor. The first switch is connected with a secondary winding of the transformer and the second switch. The second switch is connected with the output terminal. The sampling resistor is connected between the secondary winding and the output terminal for acquiring a sampling voltage. The operational amplifier generates a voltage difference value according to the result of comparing a reference voltage value with a feedback voltage value. When the sampling voltage is lower than a first voltage level and the voltage difference value is greater than a second voltage level, the second switch is turned off under control of the secondary side controller.Type: ApplicationFiled: September 7, 2023Publication date: May 2, 2024Inventors: Kehua Ma, Daofei Xu, Haitao Zhang
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Patent number: 11974459Abstract: The present application relates to the technical field of display, and discloses an OLED display panel and a display device. The OLED display panel includes a drive backplane; and an OLED device, an encapsulation structure and a color resistor structure which are arranged on the drive backplane; the encapsulation structure and the color resistor structure are located on a side, facing away from the drive backplane, of the OLED device, and the color resistor structure includes a chromatic color resistor layer, a first BM and a second BM; and the first BM is located on a side, facing away from the drive backplane, of the chromatic color resistor layer, and the second BM is located on a side, facing the drive backplane, of the chromatic color resistor layer.Type: GrantFiled: November 20, 2019Date of Patent: April 30, 2024Assignees: Beijing BOE Display Technology Co., Ltd., BOE Technology Group Co., Ltd.Inventors: Chuanxiang Xu, Shi Shu, Qi Yao, Guangcai Yuan, Yang Yue, Haitao Huang, Yong Yu
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Patent number: 11968871Abstract: The disclosure provides a display substrate, a manufacturing method thereof and a display device. The display substrate has a plurality of subpixel regions. The display substrate includes a base substrate and a pixel definition layer on the base substrate. The pixel definition layer defines a plurality of subpixel openings and each of the subpixel openings occupies one subpixel region. The display substrate further includes a functional medium layer on a side of the pixel definition layer away from the base substrate. The functional medium layer includes a first portion covering side surfaces of the subpixel opening and a second portion covering a top surface of the pixel definition layer. In the same subpixel region, surface energy of the first portion is greater than surface energy of the second portion.Type: GrantFiled: June 16, 2020Date of Patent: April 23, 2024Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yong Yu, Yang Yue, Haitao Huang, Xiang Li, Shi Shu, Chuanxiang Xu
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Publication number: 20240129852Abstract: A method and/or a communications apparatus controls a monitoring of a physical downlink control channel. The method includes: receiving, by a terminal device, a first message sent by a network device, where the first message includes M sleep time sets, and the sleep time is used to indicate a time length in which monitoring the PDCCH is stopped; receiving, by the terminal device, a second message sent by the network device, where the second message includes sleep time indication information, the sleep time indication information is used to indicate a target sleep time index, and the target sleep time index is an index in the M sleep time sets; and stopping, by the terminal device, monitoring the PDCCH in a target time period.Type: ApplicationFiled: October 20, 2023Publication date: April 18, 2024Inventors: Haibo XU, Jian WANG, Haitao LIU
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Patent number: 11958012Abstract: The present invention discloses a method for removing carbon dioxide from a reaction gas. The present invention fully utilizes the available heat in each part of the carbon dioxide removal system to reduce external heat exchange, and thereby significantly reduces the carbon dioxide content in the gas returned to the reactor, and also greatly reduces the steam consumption during the regeneration of the rich decarburizing solution. The present invention also discloses a system for removing carbon dioxide from the reaction gas and use thereof.Type: GrantFiled: September 22, 2021Date of Patent: April 16, 2024Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, SINOPEC NANJING RESEARCH INSTITUTE OF CHEMICAL INDUSTRY CO., LTD.Inventors: Xiangyun Wang, Haitao Li, Ye Zhang, Li Xu, Yunsheng Zhao, Xiaolian Wu, Pinhua Yu
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Patent number: 11944313Abstract: In some examples, an embolization device includes multiple sections with three-dimensional non-helical structures when deployed at a vascular site. The multiple sections include a first section and one or more second sections that are smaller than the first section. The first section may have a deployed structure configured to anchor the device at a vascular site (e.g., a blood vessel) of a patient while each of the one or more second sections may be formed from loops that configured to pack and obstruct the vascular site. In some cases, the embolization device also includes a third section having a deployed configuration with multiple helical windings or loops is configured to anchor the embolization device at the vascular site.Type: GrantFiled: July 19, 2022Date of Patent: April 2, 2024Assignee: Covidien LPInventors: Yihan Wang, Victoria Schuman, Zhimin Fang, Yapeng Xu, Haitao Cao, Zhipeng Chen, Xiaojing Guo, Shichang Wen
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Publication number: 20240106253Abstract: The present disclosure provides a control method of a charging system. The control method includes: providing a charging chip, wherein the charging chip is configured to charge a chargeable device, and the charging chip performs a wake-up task with a wake-up period during a standby mode; performing a plurality of wake-up subtasks in the wake-up task; and according to the priority of each of the plurality of wake-up subtasks, setting a corresponding working cycle of each wake-up subtasks, wherein the charging chip performs each of the wake-up subtasks with the corresponding working cycle, and the wake-up subtasks with different priorities have different working cycles.Type: ApplicationFiled: June 30, 2023Publication date: March 28, 2024Inventors: Bingtao Hu, Kehua Ma, Daofei Xu, Haitao Zhang
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Publication number: 20240081067Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. The operative channel-material strings in the laterally-spaced memory blocks comprise part of a memory plane. An elevationally-extending wall is in the memory plane laterally-between immediately-laterally-adjacent of the memory blocks and that completely encircles an island that is laterally-between immediately-laterally-adjacent of the memory blocks in the memory plane. Other embodiments, including method are disclosed.Type: ApplicationFiled: November 14, 2023Publication date: March 7, 2024Applicant: Micron Technology, Inc.Inventors: Lifang Xu, Indra V. Chary, Justin B. Dorhout, Jian Li, Haitao Liu, Paolo Tessariol
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Patent number: 11912623Abstract: A fluidized solidified soil based on gold tailings includes the following raw materials in parts by mass: 75 parts to 80 parts of gold tailings, 5.2 parts to 13 parts of a dispersant solution, and 9 parts to 16 parts of a solidifying material. A preparation method includes the following steps: mixing the gold tailings with the dispersant solution, and then stirring to obtain a suspension slurry of the gold tailings; and adding the solidifying material, and stirring to obtain the fluidized solidified soil. In the present disclosure, the gold tailings are used as a main material, combined with a special dispersant solution and a special solidifying material, and a fluidized solidified soil is prepared with fluidity suitable for pumping and a certain strength after hardening. The fluidized solidified soil prevents the pollution caused by gold tailings landfilling, and can be used as a filling material for various construction projects.Type: GrantFiled: May 12, 2023Date of Patent: February 27, 2024Assignees: WUHAN INSTITUTE OF TECHNOLOGY, The College of Post and Telecommunication of WITInventors: Zunqun Xiao, Caiyun Xu, Fuqi Wang, Jian Lin, Hui Wang, Zhentao Lv, Yanbin Chang, Haitao Liu, Yinlei Shi, Keqi Luo, Minghui Deng, Puyu Li, Yuepeng Zheng
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Publication number: 20240064219Abstract: A display device and a mobile terminal are provided in the present application. The display device includes a display screen, a reel, a lifting assembly, and a control circuit board. The display screen includes a first terminal and a second terminal which are disposed oppositely, wherein a display surface is connected between the first terminal and the second terminal. A reel is connected to the first terminal of the display screen. A lifting assembly is connected to the second terminal of the display screen. The lifting assembly is positioned on a side of the display screen away from the display surface, wherein the lifting assembly and the reel are configured to synchronously control the display screen to be expanded or to be rolled-up. The control circuit board is electrically connected to the display screen, wherein the control circuit board is positioned in the lifting assembly.Type: ApplicationFiled: October 28, 2022Publication date: February 22, 2024Inventor: Haitao XU
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Publication number: 20240050928Abstract: A solid heat carrier catalyst for thermal desorption of organic matter-contaminated soil and a method for preparing the same. A hollow alumina ball prepared by 3D printing is taken as a solid heat carrier, copper-nickel-vanadium composite oxide is taken as a catalytic active component, and vinyltriethoxysilane is taken as a masking agent. The ball has a diameter of 30 mm to 60 mm and a thickness of 1 mm to 2 mm. An outer surface of the ball is masked with the vinyltriethoxysilane; then the ball is pierced to make an inner surface thereof connected with the outside through channels; the ball is then immersed in a catalytic active component precursor solution; and finally, drying and calcination are performed to obtain the solid heat carrier catalyst for thermal desorption of organic matter-contaminated soil. This product is widely applicable to the field of thermal desorption of organic contaminants of soil.Type: ApplicationFiled: May 8, 2023Publication date: February 15, 2024Applicants: NANJING TECH UNIVERSITY, NANJING GEKOF INSTITUTE OF ENVIRONMENTAL PROTECTION TECHNOLOGY& EQUIPMENT CO., LTD.Inventors: Haitao XU, Qijie JIN, Mutao XU, Chengzhang ZHU, Yao LU, Wei YAN, Mingbo LI, Jing SONG
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Publication number: 20240040821Abstract: A light-emitting device and an OLED display panel are provided. The light-emitting device includes a charge generation layer. The charge generation layer includes an N-type electron generation layer, a P-type hole generation layer, and a metal activation layer disposed between the two. The metal activation layer is in surface contact with of the N-type electron generation layer and the P-type hole generation layer. It activates a surface energy at contact surfaces, prevents an accumulation of charges to form an electric field in an internal space, and improves a performance and a lifespan of the light-emitting device.Type: ApplicationFiled: January 11, 2022Publication date: February 1, 2024Applicant: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.Inventors: Zhibing YI, Jie YANG, Haitao XU, Zhengshen HUA, Xiaosu JIANG, Yu ZHANG, Munjae LEE
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Publication number: 20230361175Abstract: A transistor and a method for fabricating the transistor are provided. The semiconductor structure transistor includes a base, a low-dimensional material layer, a plurality of spacers, a source, a drain, and a gate stack. The low-dimensional material layer is provided above the base. The plurality of spacers is provided on a surface of the low-dimensional material layer away from the base and spaced apart from each other. The source and the drain are provided on the surface of the low-dimensional material layer away from the base, respectively. The gate stack is provided on the surface of the low-dimensional material layer away from the base and between the source and the drain, in which the gate stack, the source and the drain are separated by the spacers, and in contact with the spacers, respectively. Therefore, the transistor has advantages of excellent comprehensive performance, high process compatibility, and good device uniformity.Type: ApplicationFiled: August 18, 2020Publication date: November 9, 2023Applicant: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD.Inventor: Haitao XU
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Publication number: 20230335589Abstract: A transistor and a fabrication method thereof are provided. The transistor includes a substrate, a low-dimensional material layer, a gate, a source, a drain, a gate dielectric layer, and spacers. The low-dimensional material layer is provided above the substrate. The source is located at a first side of the gate. The drain is located at a second side of the gate. The gate dielectric layer is provided between the gate and the low-dimensional material layer. The spacers are provided between the source and the gate and between the drain and the gate, respectively. The substrate has fixed charges, or interface dipoles are formed by the substrate and an insulating dielectric layer. The insulating dielectric layer includes at least one of the gate dielectric layer and the spacers. In the transistor, the low-dimensional material layer may be electrostatically doped in various ways, which have low cost and are better compatible with the fabricating process of the transistor.Type: ApplicationFiled: November 13, 2020Publication date: October 19, 2023Applicant: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD.Inventor: Haitao XU
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Publication number: 20230290856Abstract: A transistor and a fabrication method thereof are provided. The transistor includes a substrate, a low-dimensional material layer provided above the substrate, a gate, a source, a drain, a gate dielectric layer, and spacers. The source is located at a first side of the gate. The drain is located at a second side of the gate. The gate dielectric layer is provided between the gate and the low-dimensional material layer. The spacers are provided between the source and the gate and between the drain and the gate, respectively, in which dipoles are formed in the spacers to electrostatically dope the low-dimensional material layer. In the transistor, the dipoles in the spacers may be used to electrostatically dope the channel in the spacer region.Type: ApplicationFiled: September 30, 2020Publication date: September 14, 2023Applicant: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD.Inventor: Haitao XU
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Publication number: 20230275125Abstract: A transistor and a fabrication method thereof are provided. The transistor includes a substrate, a low-dimensional material layer, a gate, a source, a drain, a gate dielectric layer, and spacers. The low-dimensional material layer is provided above the substrate. The source is located at a first side of the gate. The drain is located at a second side of the gate. The gate dielectric layer is provided between the gate and the low-dimensional material layer. The spacers are provided between the source and the gate and between the drain and the gate, respectively, and have fixed charges. In the transistor, the fixed charges in the spacers are used to electrostatically dope the channel material in the spacer region.Type: ApplicationFiled: September 30, 2020Publication date: August 31, 2023Applicant: BEIJING HUA TAN YUAN XIN ELECTRONICS TECHNOLOGY CO., LTD.Inventor: Haitao XU
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Patent number: 11731874Abstract: A system for resource recycling of sulfur dioxide includes a charcoal reduction furnace, a high temperature dust remover, a cooling separator A, a liquid sulfur tank, a cooling separator, a tail gas absorption tower, a gas stripping tower, a hypo reactor, a centrifuge, a mother liquor tank and a thickener. And a method for resource recycling of sulfur dioxide includes the following steps: (1) preparing elemental sulfur, (2) removing dust from a process gas containing gaseous sulfur, (3) separating elemental sulfur, (4) reabsorbing residual SO2 gas, (5) purifying sulfur powder, (6) preparing a slurry of cured hypo, (7) performing liquid-solid separation, and (8) preparing an absorption slurry. According to the method, SO2 gas is reduced into liquid sulfur and sulfur powder, and sodium thiosulfate is coproduced.Type: GrantFiled: May 10, 2020Date of Patent: August 22, 2023Assignees: NANJING GEKOF INSTITUTE OF ENVIRONMENTAL PROTECTION TECHNOLOGY & EQUIPMENT CO., LTD., NANJING TECH UNIVERSITY, JIANGSU DEYITONG ENVIRONMENTAL PROTECTION TECHNOLOGY CO., LTD., NANJING LIYUAN ENVIRONMENTAL PROTECTION TECHNOLOGY CO., LTD.Inventors: Haitao Xu, Yanzhong Xu, Mingbo Li, Renyuan Chen, Dahua Liu, Zhenshan Wu, Jing Song, Meng Xu
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Patent number: 11724292Abstract: A medium internal circulation enhanced thermal desorption soil remediation reactor and a method thereof, and belongs to the technical field of soil remediation. Internal circulation of a thermal medium is realized through a specially designed rotary drum structure, and a way for heating soil by utilizing oxidative decomposition of organic contaminants is provided, so that the treatment efficiency of an apparatus and the contaminant removal effect are improved significantly on the premise of not increasing the scale of the apparatus, and at the same time, the energy consumption of a system is reduced.Type: GrantFiled: December 8, 2021Date of Patent: August 15, 2023Assignees: NANJING TECH UNIVERSITY, CSSC NANJING LUZHOU ENVIRONMENT PROTECTION CO., LTD., NANJING INSTITUTE OF ENVIRONMENTAL SCIENCESInventors: Haitao Xu, Xiang Ling, Shengtian Zhang, Yongxian Zhou, Jisai Chen, Xiaofeng Wang, Sun Hu, Haiyan Qin
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Patent number: 11697142Abstract: A hot air circulation type indirect thermal desorption-based soil remediation system and method, belonging to the technical field of soil remediation. The system includes a thermal desorption reactor, a dust remover, a hot air circulating fan, a hot air heater, an air preheater, a combustion fan and a combustion device. By using thermal desorption gas generated by soil being heated and volatilized as a heat transfer medium and by a circular heating manner, hot air efficiently transfers heat to the soil by contact, and the high-temperature fume is kept from direct contact with the soil, so the system has the advantages of high treatment capacity, small equipment scale and the like.Type: GrantFiled: December 8, 2021Date of Patent: July 11, 2023Assignees: CSSC NANJING LUZHOU ENVIRONMENT PROTECTION CO., LTD., NANJING TECH UNIVERSITY, NANJING INSTITUTE OF ENVIRONMENTAL SCIENCES, MINISTRY OF ECOLOGY AND ENVIRONMENTInventors: Yongxian Zhou, Jisai Chen, Haitao Xu, Shengtian Zhang, Hongqi Wang, Qinrui Wu, Yongliang Zhang, Xiang Ling