Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract: An illumination subsystem configured to provide illumination for a measurement system includes first and second light sources configured to generate light for measurements in different wavelength regimes. The illumination subsystem also includes a TIR prism configured to be moved into and out of an optical path from the first and second light sources to the measurement system. If the TIR prism is positioned out of the optical path, light from only the first light source is directed along the optical path. If the TIR prism is positioned in the optical path, light from only the second light source is directed along the optical path. Various measurement systems are also provided. One measurement system includes an optical subsystem configured to perform measurements of a specimen using light in different wavelength regimes directed along a common optical path. The different wavelength regimes include vacuum ultraviolet, ultraviolet, visible, and near infrared wavelength regimes.

Abstract: An illumination subsystem configured to provide illumination for a measurement system includes first and second light sources configured to generate light for measurements in different wavelength regimes. The illumination subsystem also includes a TIR prism configured to be moved into and out of an optical path from the first and second light sources to the measurement system. If the TIR prism is positioned out of the optical path, light from only the first light source is directed along the optical path. If the TIR prism is positioned in the optical path, light from only the second light source is directed along the optical path. Various measurement systems are also provided. One measurement system includes an optical subsystem configured to perform measurements of a specimen using light in different wavelength regimes directed along a common optical path. The different wavelength regimes include vacuum ultraviolet, ultraviolet, visible, and near infrared wavelength regimes.

Abstract: Methods and systems for preparing a sample for thin film analysis are provided. One system includes an energy beam source configured to generate an energy beam. The system also includes an energy beam delivery subsystem configured to direct the energy beam to a sample and to modify the energy beam such that the energy beam has a substantially flat-top profile on the sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample. One method includes generating an energy beam and modifying the energy beam such that the energy beam has a substantially flat-top profile. The method also includes directing the energy beam to a sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample.