Abstract: A method produces tantalum powder. The method includes: (1) uniformly mixing a tantalum powder raw material, metal magnesium and at least one alkali metal and/or alkaline earth metal halide, loading the mixture into a container, and putting the container in a furnace; (2) raising the temperature of the furnace to 600-1200° C. in the presence of inert gas, and soaking; (3) at the end of soaking, lowering the temperature of the furnace to 600-800° C., vacuumizing the interior of the furnace to 10 Pa or less, soaking under the negative pressure so that the excessive metal is separated; (4) thereafter, raising the temperature of the furnace to 750-1200° C. in the presence of inert gas, and soaking so that the tantalum powder is sintered in the molten salt after oxygen reduction; (5) then cooling to room temperature and passivating to obtain a mixed material containing halide and tantalum powder; and (6) separating the tantalum powder from the resulting mixture.

Abstract: A high-purity tantalum powder and a preparation method therefor. The sum of W, Mo and Nb content of the high-purity tantalum powder is less than 0.6 ppm, Mg content is less than 1 ppm, and oxygen content is less than 600 ppm. The high-purity tantalum powder can be used to prepare a high-purity tantalum target.

Abstract: A multilayer package-on-package (PoP) assembly and a method for packaging a multilayer assembly are provided. The multilayer PoP assembly includes at least two circuit boards. An interposer is disposed between two adjacent circuit boards of the at least two circuit boards. A shield is disposed on an upper contact surface and/or a lower contact surface of the interposer in contact with the at least two circuit boards. Electrical elements on a corresponding contact surface are all surrounded by the shield. A height of the shield is not less than a height of each of the electrical elements.

Abstract: A method produces tantalum powder by reducing tantalum oxide with an alkaline earth metal. The method includes (1) mixing tantalum oxide with an excessive alkaline earth metal reducing agent, simultaneously mixing at least one alkali metal and/or alkaline earth metal halide accounting for 10-200% of the weight of the tantalum oxide, heating the mixture to a temperature of 700-1200° C. in a furnace filled with inert gas, and soaking so that the tantalum oxide and reducing agent are subjected to a reduction reaction; (2) at the end of soaking, lowering the temperature to 600-800° C., vacuumizing the interior of the furnace to 10 Pa or less, and soaking under the negative pressure so that the excessive magnesium and tantalum powder mixture are separated; (3) thereafter, raising the temperature of the furnace to 750-1200° C.

Abstract: A method produces tantalum powder. The method includes: (1) uniformly mixing a tantalum powder raw material, metal magnesium and at least one alkali metal and/or alkaline earth metal halide, loading the mixture into a container, and putting the container in a furnace; (2) raising the temperature of the furnace to 600-1200° C. in the presence of inert gas, and soaking; (3) at the end of soaking, lowering the temperature of the furnace to 600-800° C., vacuumizing the interior of the furnace to 10 Pa or less, soaking under the negative pressure so that the excessive metal is separated; (4) thereafter, raising the temperature of the furnace to 750-1200° C. in the presence of inert gas, and soaking so that the tantalum powder is sintered in the molten salt after oxygen reduction; (5) then cooling to room temperature and passivating to obtain a mixed material containing halide and tantalum powder; and (6) separating the tantalum powder from the resulting mixture.

Abstract: A tantalum powder, a tantalum powder compact, a tantalum powder sintered body, a tantalum anode, an electrolytic capacitor and a preparation method for tantalum powder. The tantalum powder contains boron element, and the tantalum powder has a specific surface area of greater than or equal to 4 m2/g; the ratio of the boron content of the tantalum powder to the specific surface area of the tantalum powder is 2˜16; the boron content is measured in weight ppm, and the specific surface area is measured in m2/g; Powder that can pass through a ?-mesh screen in the tantalum powder accounts for over 85% of the total weight of the tantalum powder, where ?=150˜170; and the tantalum powder with high CV has a low leakage current and dielectric loss, and good moldability.

Abstract: A tantalum powder, a tantalum powder compact, a tantalum powder sintered body, a tantalum anode, an electrolytic capacitor and a preparation method for tantalum powder. The tantalum powder contains boron element, and the tantalum powder has a specific surface area of greater than or equal to 4 m2/g; the ratio of the boron content of the tantalum powder to the specific surface area of the tantalum powder is 2˜16; the boron content is measured in weight ppm, and the specific surface area is measured in m2/g; Powder that can pass through a ?-mesh screen in the tantalum powder accounts for over 85% of the total weight of the tantalum powder, where ?=150˜170; and the tantalum powder with high CV has a low leakage current and dielectric loss, and good moldability.

Abstract: The invention relates to the rare metal smelting field, and particularly, the present invention relates to a tantalum powder for preparing capacitors and a process for preparing the tantalum powder, and to a sintered anode prepared from the tantalum powder. As to the tantalum powder as provided by the invention, its primary tantalum powder has a BET of from 3.0 to 4.5 m2/g. After the secondary agglomeration, the tantalum powder has a large particle size. The tantalum powder has an average Fisher sub-sieve size (FSSS) of 1.2 to 3.0 ?m wherein as measured with a standard sieve mesh, more than 75% of tantalum powder has a +325-mesh, and a particle size distribution D50 of more than 60 ?m, that is, the secondary particle size is high. A resultant capacitor anode prepared by sintering the tantalum powder of the invention at 1200° C. for 20 minutes and then being energized at the voltage of 20 V has the specific capacitance of from 140,000 to 180,000 ?FV/g and the residual current of less than 1.0 nA/?FV.

Abstract: The invention relates to the rare metal smelting field, and particularly, the present invention relates to a tantalum powder for preparing capacitors and a process for preparing the tantalum powder, and to a sintered anode prepared from the tantalum powder. As to the tantalum powder as provided by the invention, its primary tantalum powder has a BET of from 3.0 to 4.5 m2/g. After the secondary agglomeration, the tantalum powder has a large particle size. The tantalum powder has an average Fisher sub-sieve size (FSSS) of 1.2 to 3.0 ?m wherein as measured with a standard sieve mesh, more than 75% of tantalum powder has a +325-mesh, and a particle size distribution D50 of more than 60 ?m, that is, the secondary particle size is high. A resultant capacitor anode prepared by sintering the tantalum powder of the invention at 1200° C. for 20 minutes and then being energized at the voltage of 20 V has the specific capacitance of from 140,000 to 180,000 ?FV/g and the residual current of less than 1.0 nA/?FV.

Abstract: A vacuum circuit interrupter having a pole unit structure and an operating mechanism structured to move the vacuum circuit interrupter contacts between a first, closed position, wherein a movable contact is coupled to, and in electrical communication with, a fixed contact, and a second, open position wherein the movable contact is spaced from, and not in electrical communication with, the fixed contact, as well as being structured to rotate a housing assembly rotatable portion between a first position, wherein a rotatable terminal is coupled to, and in electrical communication with, a line terminal, and a second position, wherein the rotatable terminal is coupled to, and in electrical communication with, a grounded terminal.

Abstract: A vacuum circuit interrupter having a pole unit structure and an operating mechanism structured to move the vacuum circuit interrupter contacts between a first, closed position, wherein a movable contact is coupled to, and in electrical communication with, a fixed contact, and a second, open position wherein the movable contact is spaced from, and not in electrical communication with, the fixed contact, as well as being structured to rotate a housing assembly rotatable portion between a first position, wherein a rotatable terminal is coupled to, and in electrical communication with, a line terminal, and a second position, wherein the rotatable terminal is coupled to, and in electrical communication with, a grounded terminal.