Abstract: A method for polishing a polymer surface is provided by an embodiment of the present invention. The method includes: curing the polymer surface; polishing the polymer surface cured through a CMP process. By using the method for polishing a polymer surface provided by embodiments of the present invention, the mentioned problems in the prior art are solved. The uniformity of the polymer surface can be improved to <1% through a CMP process, which can meet the requirements of high density and small linewidth integration.

Abstract: A method for polishing a polymer surface is provided by an embodiment of the present invention. The method includes: curing the polymer surface; polishing the polymer surface cured through a CMP process. By using the method for polishing a polymer surface provided by embodiments of the present invention, the mentioned problems in the prior art are solved. The uniformity of the polymer surface can be improved to <1% through a CMP process, which can meet the requirements of high density and small linewidth integration.

Abstract: A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back surface; then performing an etching on the substrate back surface, and making the TSV backside reveal more than 10 ?m.

Abstract: A TSV wafer thinning controlling method and system is provided, which can improve the accuracy of the wafer thinning technique. The system includes a chuck table used for carrying a wafer and a grinding device used for thinning the wafer; and further includes: an infrared sensor equipped on the chuck table or grinding device, and a measurement feedback system connected with the infrared sensor and the grinding device; wherein, the infrared sensor comprises an infrared emitting and receiving circuit, signal amplifying and filtering circuit and a data processor.

Abstract: A TSV backside reveal structure is provided, formed by a TSV conductive column on a substrate running throughout the substrate front surface and substrate back surface and stretching out of the substrate back surface; wherein, a sloping buffer is formed within the region between the substrate back surface and the TSV, and the height of the sloping buffer changes continuously; wherein the region close to the TSV has the highest height and the height of the buffer gradually decreases to that of the substrate back surface.

Abstract: A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back surface; then performing an etching on the substrate back surface, and making the TSV backside reveal more than 10 ?m.

Abstract: Embodiments of the invention provide methods for reducing formation of void-type defects on the surface of a substrate during electrochemical plating. Embodiments of the invention provide methods to improve the wetting of a substrate surface prior to immersion and thereby minimize adhesion of bubbles to the substrate surface during immersion. A thin uniform metal oxide is formed on a metal layer on the substrate immediately prior to substrate immersion. In one aspect, exposing the substrate to an oxygen-containing gas, e.g. air, forms the metal oxide. The oxygen-containing gas may be flowed over the substrate or the substrate may be rotated at a high rate in the presence of an oxygen-containing gas. In another aspect, non-uniform metal oxides are first removed from the substrate in an anneal process and a thin uniform metal oxide is subsequently re-formed. An optimized substrate immersion method may also be used to further reduce void defects.