Abstract: Disclosed is a carbon-dioxide-responsive self-thickening intelligent fluid based on supramolecular self-assembly, which comprises a Gemini surfactant, a single-chain amide molecule having a tertiary amine head group and water, wherein the Gemini surfactant and the single-chain amide molecule are self-assembled to form a vesicle structure dispersed in water, with a hydrophilic head group being located outside and a hydrophobic tail group located inside. The method for preparing the carbon-dioxide-responsive self-thickening intelligent fluid of the present invention is simple, the injection viscosity is low, and the fluid is converted into a gel when encountering carbon dioxide, so that the viscosity is greatly increased.

Abstract: According to an embodiment, an imaging element includes a plurality of light receiving elements, a plurality of scanning circuits, a first line comprising a plurality of nodes, and a plurality of first variable resistance elements. The plurality of scanning circuits are respectively connected to the plurality of light receiving elements. Each of the plurality of first variable resistance elements is connected between the corresponding one of the nodes and a corresponding one of the scanning circuits. At least one of the first variable resistance elements includes a plurality of resistance elements connected to each other in parallel.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.

Abstract: According to an embodiment, an imaging element includes a plurality of light receiving elements, a plurality of scanning circuits, a first line comprising a plurality of nodes, and a plurality of first variable resistance elements. The plurality of scanning circuits are respectively connected to the plurality of light receiving elements. Each of the plurality of first variable resistance elements is connected between the corresponding one of the nodes and a corresponding one of the scanning circuits. At least one of the first variable resistance elements includes a plurality of resistance elements connected to each other in parallel.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.