Patents by Inventor Haiyang PENG

Haiyang PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Imaging element for use with a retina chip, imaging apparatus including the same, and semiconductor apparatus included in the same
    Patent number: 9924117
    Abstract: According to an embodiment, an imaging element includes a plurality of light receiving elements, a plurality of scanning circuits, a first line comprising a plurality of nodes, and a plurality of first variable resistance elements. The plurality of scanning circuits are respectively connected to the plurality of light receiving elements. Each of the plurality of first variable resistance elements is connected between the corresponding one of the nodes and a corresponding one of the scanning circuits. At least one of the first variable resistance elements includes a plurality of resistance elements connected to each other in parallel.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: March 20, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yusuke Higashi, Takao Marukame, Masamichi Suzuki, Koichiro Zaitsu, Haiyang Peng, Hiroki Noguchi, Yuichiro Mitani
  • Nonvolatile memory integrated circuit with built-in redundancy
    Patent number: 9620203
    Abstract: According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: April 11, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haiyang Peng, Koichiro Zaitsu, Shinichi Yasuda
  • IMAGING ELEMENT, IMAGING APPARATUS, AND SEMICONDUCTOR APPARATUS
    Publication number: 20160088243
    Abstract: According to an embodiment, an imaging element includes a plurality of light receiving elements, a plurality of scanning circuits, a first line comprising a plurality of nodes, and a plurality of first variable resistance elements. The plurality of scanning circuits are respectively connected to the plurality of light receiving elements. Each of the plurality of first variable resistance elements is connected between the corresponding one of the nodes and a corresponding one of the scanning circuits. At least one of the first variable resistance elements includes a plurality of resistance elements connected to each other in parallel.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 24, 2016
    Inventors: Yusuke HIGASHI, Takao Marukame, Masamichi Suzuki, Koichiro Zaitsu, Haiyang Peng, Hiroki Noguchi, Yuichiro Mitani
  • SEMICONDUCTOR INTEGRATED CIRCUIT
    Publication number: 20160078933
    Abstract: According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.
    Type: Application
    Filed: September 9, 2015
    Publication date: March 17, 2016
    Inventors: Haiyang PENG, Koichiro ZAITSU, Shinichi YASUDA