Abstract: Disclosed are a preparation method for manganese-doped red phosphor, a device and a backlight module including the product. The method includes: 1) mixing A2BF6 polycrystalline particles with mill balls; 2) mixing A2BF6 powder obtained after ball-milling with a hydrofluoric acid for secondary crystallization; 3) filtering out solid particles in A2BF6 and hydrofluoric acid solution after the secondary crystallization; 4) performing ion exchange between A2BF6 particles and A2BF6; and 5) filtering out solid particles to obtain a filter cake, and performing drying treatment to obtain manganese-doped red phosphor.

Abstract: Disclosed are a preparation method for manganese-doped red phosphor, a device and a backlight module including the product. The method includes: 1) mixing A2BF6 polycrystalline particles with mill balls; 2) mixing A2BF6 powder obtained after ball-milling with a hydrofluoric acid for secondary crystallization; 3) filtering out solid particles in A2BF6 and hydrofluoric acid solution after the secondary crystallization; 4) performing ion exchange between A2BF6 particles and A2BF6; and 5) filtering out solid particles to obtain a filter cake, and performing drying treatment to obtain manganese-doped red phosphor.

Abstract: A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer.

Abstract: A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer.