Abstract: A carrier device in semiconductor processing equipment includes a base and an edge ring. The base includes a base body configured to carry a wafer and has an outer diameter smaller than a diameter of the wafer. The edge ring surrounds the base and has an outer diameter greater than the diameter of the wafer. An outer circumferential surface of the base body faces and is spaced from an inner circumferential surface of the edge ring to form a first annular channel. The first annular channel communicates with a gas supply system. When the base body carries the wafer, an upper surface of the edge ring faces and is spaced from a lower surface of the wafer to form a second annular channel. The first annular channel communicates with the second annular channel.

Abstract: A method for etching a silicon wafer includes: a main etching process using a first mixed gas to perform a plasma etching process to etch the silicon wafer until a pattern on the silicon wafer reaches a specified aspect ratio, the first mixed gas being configured to etch silicon and react with silicon to form non-volatile reaction products; and an auxiliary etching process using a second mixed gas to perform another plasma etching process, the second mixed gas being configured to react with silicon to generate the non-volatile reaction products, and a formation rate of the non-volatile reaction products in the auxiliary etching process being greater than a formation rate of the non-volatile reaction products in the main etching process. The main etching process and the auxiliary etching process are alternately performed at least once until the pattern on the silicon wafer reaches a specified etching depth.