Abstract: A cathode active material in the present disclosure has a monoclinic crystal structure that belongs to a space group C2/m, and has a composition shown as a composition formula: AxMn1-yBiyO2·zH2O (A: one or both of Na and K, 0<x<1, 0<y<1, 0<z<2).

Abstract: A flow rate of a gas is determined based on a predetermined relational expression including, as parameters: the flow rate of the gas; diameter and length of a hole; upstream and downstream pressures; and temperature, molecular weight, viscosity coefficient, and specific heat ratio of the gas. Additionally, setting conditions for a type and temperature of the gas, the length of the hole, and the pressures upstream and downstream from the hole are set; the relational expression is used to obtain the correspondence relationship between the diameter of the hole and the flow rate of the gas flowing through the hole; an approximation function approximating the obtained correspondence relationship is determined; the flow rate of a gas passing through a test piece having a hole of an unknown diameter is measured; and the diameter of the hole is estimated, based on the measured flow rate and the approximation function.

Abstract: An inorganic particle dispersion resin composition, containing: a resin; and inorganic particles, in which the inorganic particles include silica-covered aluminum nitride particles and alumina particles, and the silica-covered aluminum nitride particles include aluminum nitride particles and a silica film covering surfaces of the aluminum nitride particles. A total content of the inorganic particles is preferably in a range of greater than or equal to 60.0 volume % and less than or equal to 85.0 volume %.

Abstract: A contact probe includes: a first plunger; a second plunger; and a coil spring provided between the first and second plungers and configured to connect the first and second plungers to each other so as to freely advance and retreat. The first plunger is provided with a groove portion formed on a side surface of the first plunger.

Abstract: A contact probe includes: a first plunger including a tip end configured to be contact with one of electrode, and a flange that is continuous to the tip end; and a coil spring configured to be joined to the first plunger. The tip end includes: a tip contact including a tip configured to be contact with the one of the electrode; a columnar first base portion provided to a base end side of the tip contact, and including a lateral side surface extending along a longitudinal axis of the first plunger; and a second base portion provided to an end of the first base portion, the end being on a side opposite to the tip contact, the second base portion including an inclined lateral side inclined in a manner approaching the longitudinal axis of the first plunger, as the inclined lateral side extends toward the flange.

Abstract: A probe unit includes: a contact probe that comes into contact with, at both ends of a longitudinal length of the contact probe, each of electrodes that are contact targets; and a probe holder including a main body portion configured to hold the contact probe, the main body portion being insulating. The main body portion includes, formed therein: a holder hole configured to hold the contact probe inserted in the holder hole; and a counterbore portion drilled in at least part of an area around the holder hole, the area being on one of surfaces of the main body portion, the surfaces being near one end and another end of the contact probe, the counterbore portion having an inner wall surface that forms a hollow space and that is insulating.

Abstract: A probe holder includes: a first layered member including members layered over one another; and a second layered member bonded to the first layered member and including members layered over one another. Each of the first and second layered members includes: a first member made of a material having a low dielectric constant; a second member provided on one of surfaces of the first member and having higher hardness than the first member; and a third member provided on the other surface of the first member and having higher hardness than the first member. The probe holder further includes a holder hole formed by bonding the third members of the first and second layered members, the holder hole penetrating the probe holder in a direction in which the first and second layered members are layered, and having a stepped hole shape having a smaller diameter in the second members.

Abstract: A method of forming a semiconductor structure includes providing a semiconductor wafer including a plurality of semiconductor dies, providing a polymerized material layer, attaching the polymerized material layer to the semiconductor wafer such that the polymerized material layer is polymerized prior to the step of attaching the polymerized material layer to the semiconductor wafer, applying and patterning an etch mask layer over the polymerized material layer, such that openings are formed through the etch mask layer, etching portions of the polymerized material layer that are proximal to the openings through the etch mask layer by applying an etchant into the openings through the etch mask layer in an etch process, and removing the etch mask layer selective to the polymerized material layer. Alternatively, a patterned polymerized material layer may be transferred from a transfer substrate to the semiconductor wafer.

Abstract: A contact probe includes: a first plunger; a second plunger; and a coil spring provided between the first and second plungers and configured to connect the first and second plungers to each other so as to freely advance and retreat. The first plunger is provided with a groove portion formed on a side surface of the first plunger.

Abstract: A method of forming a semiconductor structure includes providing a semiconductor wafer including a plurality of semiconductor dies, providing a polymerized material layer, attaching the polymerized material layer to the semiconductor wafer such that the polymerized material layer is polymerized prior to the step of attaching the polymerized material layer to the semiconductor wafer, applying and patterning an etch mask layer over the polymerized material layer, such that openings are formed through the etch mask layer, etching portions of the polymerized material layer that are proximal to the openings through the etch mask layer by applying an etchant into the openings through the etch mask layer in an etch process, and removing the etch mask layer selective to the polymerized material layer. Alternatively, a patterned polymerized material layer may be transferred from a transfer substrate to the semiconductor wafer.

Abstract: A method of forming a semiconductor structure includes providing a semiconductor wafer including a plurality of semiconductor dies, providing a polymerized material layer, attaching the polymerized material layer to the semiconductor wafer such that the polymerized material layer is polymerized prior to the step of attaching the polymerized material layer to the semiconductor wafer, applying and patterning an etch mask layer over the polymerized material layer, such that openings are formed through the etch mask layer, etching portions of the polymerized material layer that are proximal to the openings through the etch mask layer by applying an etchant into the openings through the etch mask layer in an etch process, and removing the etch mask layer selective to the polymerized material layer. Alternatively, a patterned polymerized material layer may be transferred from a transfer substrate to the semiconductor wafer.

Abstract: A method of forming a semiconductor structure includes providing a semiconductor wafer including a plurality of semiconductor dies, providing a polymerized material layer, attaching the polymerized material layer to the semiconductor wafer such that the polymerized material layer is polymerized prior to the step of attaching the polymerized material layer to the semiconductor wafer, applying and patterning an etch mask layer over the polymerized material layer, such that openings are formed through the etch mask layer, etching portions of the polymerized material layer that are proximal to the openings through the etch mask layer by applying an etchant into the openings through the etch mask layer in an etch process, and removing the etch mask layer selective to the polymerized material layer. Alternatively, a patterned polymerized material layer may be transferred from a transfer substrate to the semiconductor wafer.

Abstract: A wiring structure of a head suspension including a flexure that supports a head and is attached to a load beam applying load onto the head, includes write wiring and read wiring formed on the flexure and connected to the head, each having wires of opposite polarities and further including a stacked interleaved part which includes segments electrically connected to the respective wires of the write wiring, the segments stacked on and facing the wires through an electrical insulating layer so that the facing wire and segment have opposite polarities, is manufactured by a wiring step, an insulating layer forming step and a stacked interleaved part forming step.

Abstract: An alkaline storage battery contains: a positive electrode; a negative electrode containing, as an active material, at least one of a metal capable of forming a dendrite and a metal compound thereof; and an alkaline electrolyte. The alkaline electrolyte contains a compound which is a chain saturated hydrocarbon at least partially having a hydrophilic functional group other than a hydroxyl group and having a molecular weight of 400 or more and less than 220000 in an amount of less than 15 g per 100 mL of the electrolyte.

Abstract: A decorative sheet is caused to emit light from part of the front surface to improve the design features. A decorative sheet 1 according to an embodiment includes a first refractive index layer (high refractive index layer) 11 having a first refractive index, a decorative layer 14, a second refractive index layer (low refractive index resin layer) 12 that has a second refractive index lower than the first refractive index and is provided between the first refractive index layer and the decorative layer, and a light diffusion layer 15 that is provided in partial contact with one surface of the first refractive index layer and diffuses light entering from the first refractive index layer so that light is released from part of the front surface of the decorative sheet. A resin molded body 21 may be integrally laminated on the back surface side of the decorative sheet 1 to form a decorative molded article 2.

Abstract: A zinc anode material for secondary cells includes zinc-containing particles that are coated with a coating composition containing at least one oxide of a metal selected from titanium, zirconium, magnesium, tin and yttrium. The surface localization ratio of the coating composition of Equation (1) ranges from 1.6 to 16. In Equation (1), the surface metal atomic ratio of the coating composition is represented by Equation (2), and the bulk metal atomic ratio of the coating composition is represented by Equation (3).

Abstract: A zinc anode material for secondary cells includes zinc-containing particles that are coated with a coating composition containing at least one oxide of a metal selected from titanium, zirconium, magnesium, tin and yttrium. The surface localization ratio of the coating composition of Equation (1) ranges from 1.6 to 16. In Equation (1), the surface metal atomic ratio of the coating composition is represented by Equation (2), and the bulk metal atomic ratio of the coating composition is represented by Equation (3).

Abstract: A wiring structure of a head suspension including a flexure that supports a head and is attached to a load beam applying load onto the head, includes write wiring and read wiring formed on the flexure and connected to the head, each having wires of opposite polarities and further including a stacked interleaved part which includes segments electrically connected to the respective wires of the write wiring, the segments stacked on and facing the wires through an electrical insulating layer so that the facing wire and segment have opposite polarities, is manufactured by a wiring step, an insulating layer forming step and a stacked interleaved part forming step.

Abstract: A wiring structure of a head suspension including a flexure that supports a head and is attached to a load beam applying load onto the head, comprises write wiring and read wiring formed on the flexure and connected to the head, each having wires of opposite polarities, and further including a stacked interleaved part includes segments electrically connected to the respective wires of the write wiring, the segments stacked on and facing the wires through an electrical insulating layer so that the facing wire and segment have opposite polarities.

Abstract: Three lamp units are supported on a bracket supported to be rotatable with respect to a lamp body. In the configuration of the respective lamp units, light source units are supported to be rotatable in an up and down direction with respect to the bracket, and projection lenses are fixedly supported on the bracket. Accordingly, it is possible to correct a misalignment of optical axes among the lamp units by preventing the occurrence of the positional misalignment of the projection lenses among the lamp units and then rotating the respective light source units with respect to the bracket.