Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

Abstract: A weight with optimum weight and high strength can be easily manufactured and the vibration actuator with excellent vibration characteristic is provided. The vibration actuator is formed by a casing 2 with cylindrical shape, a coil 21 provided in the casing 2, and a mover 4 that vibrates along an vibration-axis direction of the casing 2. The mover 4 includes a mover body and a weight fixed to the mover body. A protrusion 311 protruding toward an opening of the casing 2 is provided at a central portion of the mover body, and a recess 321 which is recessed toward the opening of the casing 2 is provided at the central portion of the weight 32. The mover body and the weight 32 is fixed in a state in which the protrusion 311 is inserted into the recess 321.

Abstract: The present invention provides a multi-junction solar cell capable of increasing the degree of freedom of the selection of compound semiconductors. The multi-junction solar cell 1 includes a layered structure section 4 including compound semiconductor photovoltaic devices 2 and 3 matched in lattice constant with each other and joined to each other, and a nanopillar structure section 7 including a compound semiconductor photovoltaic device or a plurality of compound semiconductor photovoltaic devices 5 and 6 joined to each other.

Abstract: A buffer layer configured of the same conductive semiconductor layers of two or more layers as a drift layer is installed by epitaxial growth between a first semiconductor layer configuring the drift layer that is a layer in which components of the semiconductor device are made and a base substrate including a silicon carbide single crystal wafer. A step of donor concentration is provided at an interface between the drift layer and the buffer layer, an interface between the semiconductor layers configuring the buffer layer, and an interface between the buffer layer and the base substrate and the donor concentration of the drift layer side is lower than that of the base substrate side, thereby making it possible to convert most basal plane dislocations into threading edge dislocations as compared to the drift layer having one layer or the buffer layer configured of one layer.

Abstract: A processing method includes disposing a workpiece having a processed surface in a processing solution, disposing a photocatalyst film in the processing solution opposite the processed surface, irradiating the photocatalyst film with a light, so as to generate active species from the processing solution by a photocatalytic action of the photocatalyst film, controlling a diffusion distance of the active species in the processing solution by a radical scavenger added to the processing solution, and chemically reacting the active species with surface atoms of the processed surface and generating a chemical compound to be eluted in the processing solution, so as to process the workpiece.

Abstract: To provide a solar cell enabling practical electric power to be obtained and excitons to be effectively collected, and a manufacturing method of the solar cell. A nanowire solar cell 1 comprises: a semiconductor substrate 2; a plurality of nanowire semiconductors 4 and 5 forming pn junctions; a transparent insulating material 6 filled in the gap between the plurality of nanowire semiconductors 4 and 5; an electrode 7 covering the end portion of the plurality of nanowire semiconductors 4 and 5; and a passivation layer 10 provided between the semiconductor 5 and the transparent insulating material 6 and between the semiconductor 5 and the electrode 7.

Abstract: A solar cell element having improved power generation efficiency is provided. A solar cell element 100 has a substrate 110, a mask pattern 120, semiconductor nanorods 130, a first electrode 150 and a second electrode 160. The semiconductor nanorods 130 are disposed in triangular lattice form as viewed in plan on the substrate 110. The ratio p/d of the center-to-center distance p between each adjacent pair of the semiconductor nanorods 130 and the minimum diameter d of the semiconductor nanorods 130 is within the range from 1 to 7. Each semiconductor nanorod 130 has a central nanorod 131 formed of a semiconductor of a first conduction type, a first cover layer 132 formed of an intrinsic semiconductor and covering the central nanorod 131, and a second cover layer 138 formed of a semiconductor of a second conduction type and covering the first cover layer 132.

Abstract: The present invention provides a method for manufacturing a multi-junction solar cell which makes it possible to implement a 4-junction solar cell and to increase the area of a device. A nucleus generation site is disposed on a substrate 2 made of a first semiconductor. A first material gas is fed to the nucleus generation site to form a wire-like semiconductor 3 in the nucleus generation site. A third material gas and a fourth material gas are fed to form a wire-like semiconductor 4 on the semiconductor 3 and a wire-like semiconductor 5 on the semiconductor 4. A nucleus generation site is disposed on a substrate 6. The first material gas is fed to the nucleus generation site to form a wire-like semiconductor 2a in the nucleus generation site. A second material gas to the fourth material gas are fed to form the wire-like semiconductor 3 on the semiconductor 2a, the wire-like semiconductor 4 on the semiconductor 3, and the wire-like semiconductor 5 on the semiconductor 4.

Abstract: Provided is a nanowire photovoltaic cell (1) including a semiconductor substrate (2) and a plurality of nanowire semiconductors (4) and (5) having a PN junction. The semiconductor substrate (2) and the nanowire semiconductors (4) and (5) are composed of one single crystal. The manufacture method of the nanowire photovoltaic cell includes a step of coating a part of a surface of the semiconductor substrate (2) with an amorphous film (3), and a step of developing a crystal of a material identical to that of the semiconductor substrate (2) through epitaxial growth on the uncoated surface of the semiconductor substrate (2) to form the plurality of nanowire semiconductors (4) and (5).

Abstract: A buffer layer configured of the same conductive semiconductor layers of two or more layers as a drift layer is installed by epitaxial growth between a first semiconductor layer configuring the drift layer that is a layer in which components of the semiconductor device are made and a base substrate including a silicon carbide single crystal wafer. A step of donor concentration is provided at an interface between the drift layer and the buffer layer, an interface between the semiconductor layers configuring the buffer layer, and an interface between the buffer layer and the base substrate and the donor concentration of the drift layer side is lower than that of the base substrate side, thereby making it possible to convert most basal plane dislocations into threading edge dislocations as compared to the drift layer having one layer or the buffer layer configured of one layer.

Abstract: There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate 2, is grown a semiconductor 2a comprising the same material as the substrate 2 in the shape of a wire. On the semiconductor 2a, are successively grown semiconductors 3, 4, 5, and 6 with a narrower band gap in the shape of a wire. The semiconductor 3 may be directly grown in the shape of a wire on the nucleation site formed on the substrate 2. It is preferred to form the nucleation site by forming an amorphous SiO2 coating 8a on the substrate 2 and etching a part of the amorphous SiO2 coating 8a. Further, it is preferred to form an insulating film 8 in the region except the nucleation sites on the substrate 2 by allowing the amorphous SiO2 coating 8a to remain therein. The semiconductor 2a is GaP; the semiconductor 3 is Al0.3Ga0.7As; the semiconductor 4 is GaAs; the semiconductor 5 is In0.3Ga0.

Abstract: There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate 2, is grown a semiconductor 2a comprising the same material as the substrate 2 in the shape of a wire. On the semiconductor 2a, are successively grown semiconductors 3, 4, 5, and 6 with a narrower band gap in the shape of a wire. The semiconductor 3 may be directly grown in the shape of a wire on the nucleation site formed on the substrate 2. It is preferred to form the nucleation site by forming an amorphous SiO2 coating 8a on the substrate 2 and etching a part of the amorphous SiO2 coating 8a. Further, it is preferred to form an insulating film 8 in the region except the nucleation sites on the substrate 2 by allowing the amorphous SiO2 coating 8a to remain therein. The semiconductor 2a is GaP; the semiconductor 3 is Al0.3Ga0.7As; the semiconductor 4 is GaAs; the semiconductor 5 is In0.3Ga0.

Abstract: A hydrogen storage tank comprises a hydrogen adsorbent accommodated in a pressure-resistant container. The hydrogen adsorbent is capable of adsorbing and retaining hydrogen gas of a volume exceeding an occupation volume occupied by the hydrogen adsorbent itself. As for the hydrogen adsorbent, the amount of endothermic heat, which is generated when the adsorbed hydrogen gas is released, is not more than 16 kJ per mol of hydrogen molecules. The hydrogen adsorbent is prevented from leaking outside of the pressure-resistant container by a filter.

Abstract: The present invention provides a method for manufacturing a multi-junction solar cell which makes it possible to implement a 4-junction solar cell and to increase the area of a device. A nucleus generation site is disposed on a substrate 2 made of a first semiconductor. A first material gas is fed to the nucleus generation site to form a wire-like semiconductor 3 in the nucleus generation site. A third material gas and a fourth material gas are fed to form a wire-like semiconductor 4 on the semiconductor 3 and a wire-like semiconductor 5 on the semiconductor 4. A nucleus generation site is disposed on a substrate 6. The first material gas is fed to the nucleus generation site to form a wire-like semiconductor 2a in the nucleus generation site. A second material gas to the fourth material gas are fed to form the wire-like semiconductor 3 on the semiconductor 2a, the wire-like semiconductor 4 on the semiconductor 3, and the wire-like semiconductor 5 on the semiconductor 4.

Abstract: A hydrogen storage material includes a nano size material that can be formed in a multi-layered core/shell structure and/or in a nanotabular (or platelet) form.

Abstract: There is provided a method of purifying single wall carbon nanotubes so as to be able to remove impurities such as a metal catalyst to obtain the single wall carbon nanotubes with high purity. The method includes the first oxidizing step of oxidizing the single wall carbon nanotubes soot 1 containing an impurity with a metal catalyst 2, the first refluxing step of refluxing the single wall carbon nanotubes soot 1 obtained by the first oxidizing step in an acid solution, the second oxidizing step of oxidizing the single wall carbon nanotubes soot 1 obtained by the first refluxing step, and the second refluxing step of refluxing the single wall carbon nanotubes obtained soot 1 by the second oxidizing step in an acid solution. The single wall nanotubes 1 are synthesized by an arc discharge with a carbon electrode containing a metal catalyst 2. The carbon electrode contains a metal catalyst which consists of Ni, Y, and Ti. The first oxidizing step is performed by heating at a temperature between 350 and 600° C.

Abstract: To produce a hydrogen absorbing alloy powder which is an aggregate of alloy particles each including a metal matrix and added-components, an aggregate of metal matrix particles and an aggregate of added-component particles are used, and mechanical alloying is carried out. In this case, the relationship between the particle size D of the metal matrix particles and the particle size d of the added-component particles is set at d?D/6. Thus, the milling time can be shortened remarkably.

Abstract: A hydrogen storage tank comprises a hydrogen adsorbent accommodated in a pressure-resistant container. The hydrogen adsorbent is capable of adsorbing and retaining hydrogen gas of a volume exceeding an occupation volume occupied by the hydrogen adsorbent itself. As for the hydrogen adsorbent, the amount of endothermic heat, which is generated when the adsorbed hydrogen gas is released, is not more than 16 kJ per mol of hydrogen molecules. The hydrogen adsorbent is prevented from leaking outside of the pressure-resistant container by a filter.

Abstract: A hydrogen storage material includes a nano size material that can be formed in a multi-layered core/shell structure and/or in a nanotabular (or platelet) form.

Abstract: Carbon structures, e.g. carbon nano-fibers, suitable for absorbing hydrogen at low pressures and low temperatures are produced by a selective oxidation and/or acid reflux process. The process includes heating an impure mixture containing a crystalline form of carbon in the presence of an oxidizing gas at a temperature and time sufficient to selectively oxidize and remove a substantial amount of any amorphous carbon impurities from the mixture. Metal containing impurities can be removed from the mixture by exposing the desired carbon and accompanying impurities to an acid to produce a carbon fiber that is substantially free of both non-fiber carbon impurities and metal impurities. Another aspect of the present invention includes purified carbon structures that can store hydrogen at low pressures and temperatures.