Abstract: A method of producing a Bi—Pb—Sr—Ca—Cu oxide superconductor by thermally treating raw material comprises steps of performing first plastic deformation on the raw material, performing first heat treatment on the material being subjected to the first plastic deformation, performing second plastic deformation on the material being subjected to the first heat treatment, and performing second heat treatment on the material being subjected to the second plastic deformation.

Abstract: A method of producing a Bi-Pb-Sr-Ca-Cu oxide superconductor by thermally treating raw material comprises steps of performing first plastic deformation on the raw material, performing first heat treatment on the material being subjected to the first plastic deformation, performing second plastic deformation on the material being subjected to the first heat treatment, and performing second heat treatment on the material being subjected to the second plastic deformation.

Abstract: A superconductive material is in composition expressed as Y.sub.0.33 Ba.sub.0.67).sub.a Cu.sub.b (OF).sub.c. The usual a, b and c are so selected as to satisfy a relation expression ax (mix valence of A)+bx (mix valence of B)=cx (mix valence of C).

Abstract: An oxide superconductive wire is provided by, for example, forming an oxide superconductive layer on a tape-type flexible base. A preliminary compressive strain is applied to the oxide superconductive layer in the longitudinal direction. The remaining strain can be provided by using a base having thermal expansion coefficient larger than that of the oxide superconductive layer and by cooling the same after heat treatment, due to contraction of the base. Since the preliminary compressive strain is applied to the oxide superconductive layer, degradation of superconductivity of the oxide superconductive layer can be suppressed even if the oxide superconductive wire is bent in any direction, compared with the wire without such strain. Therefore, the oxide superconductive wire can be coiled, for example, without much degrading the superconductivity.

Abstract: An oxide superconductive wire is provided by, for example, forming an oxide superconductive layer on a tape-type flexible base. A preliminary compressive strain is applied to the oxide superconductive layer in the longitudinal direction. The remaining strain can be provided by using a base having thermal expansion coefficient larger than that of the oxide superconductive layer and by cooling the same after heat treatment, due to contraction of the base. Since the preliminary compressive strain is applied to the oxide superconductive layer, degradation of superconductivity of the oxide superconductive layer can be suppressed even if the oxide superconductive wire is bent in any direction, compared with the wire without such strain. Therefore, the oxide superconductive wire can be coiled, for example, without much degrading the superconductivity.

Abstract: A method of manufacturing a superconductive conductor containing a superconductive ceramic material generally expressed by the composition AaBbCc, where A represents at least a sort of element selected from a group of those belonging to the groups Ia, IIa and IIIb of the periodic table, B represent at least a single element selected from a group consisting of groups Ib, IIb and IIIa of the periodic table, C represents at least a single sort of element selected from a group of oxygen, carbon, nitrogen, fluorine and sulfur and a, b and c represent numbers showing composition ratios of A, B and C respectively, includes a step of melting a material generally expressed by a formula AaBb, a step of continuously drawing out a melt of AaBb from a hole provided in a frame, a step of solidifying the AaBb melt drawn out from the hole and a step of heating a solidified body of AaBb in an atmosphere containing C.

Abstract: A molded article of ceramic oxide superconductor having an increased critical current density is produced by a method including sintering a powdery mixture of oxides and/or carbonates of elements which constitute the ceramic oxide superconductor to obtain a molded article, or melting the sintered ceramic oxide superconductor and molding the superconductor melt to obtain a molded article, wherein the powdery mixture and/or the molded article is irradiated.

Abstract: A ceramic superconducting member comprises a base material composed of a ceramic superconductive material such as Y.sub.1.0 Ba.sub.2.0 Cu.sub.3.0 O.sub.7-x, and a protective layer of a ceramic material such as MgO formed on the surface of the tape-like base material.

Abstract: The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used.Any material selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and SiF.sub.4, and GeH.sub.4 or GeF.sub.4, are used as raw material gases. H.sub.2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm.sup.2, and a substrate temperature of 50.degree. to 250.degree. C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided.

Abstract: A ceramic type superconductive layer (2) is formed on the outer peripheral surface of an optical fiber (1), and a stabilizing layer (3) is formed so that it contacts the outer peripheral surface of the superconductive layer (3). The diameter of the optical fiber is, for example, not more tha 100 .mu.m. The superconductive layer may be formed with a spirally extending groove (7) which divides the superconductive layer.

Abstract: Disclosed are pin or nip type amorphous photovoltaic elements having the i-type layer comprised of an a-SiGe: H film, which are characterized in that an i-type amorphous silicon buffer layer is disposed between the layers of p-type and i-type and thus, the mutual diffusion of impurities and/or elements added to the i-type and/or the p-type layers through the p/i boundary is effectively restricted due to the presence of the buffer layer. As a result the formation of defects at the p/i boundary and the deterioration of the p-type layer are effectively prevented, and the properties important to these kinds of devices, such as Voc, Jsc, FF being substantially improved, thereby making it possible to provide photovoltaic elements such as solar batteries having a practically acceptable long life span and a high reliability.

Abstract: A PIN solar cell of amorphous silicon with a high photovoltaic conversion efficiency is provided, in which in the P type layer, the electric conductivity of a zone in contact with an electrode is higher than that of another zone in contact with the I type layer.

Abstract: A multicomponent amorphous silicon film suitable for a solar cell is produced at a higher deposition rate by a novel process comprising using jointly a sputtering method and a plasma CVD method within a pressure range of not lower than a pressure at which the maximum film formation rate is given in the sputtering method.