Abstract: To provide a shield substrate, semiconductor package and semiconductor device which can give improved resistance to thermal stress. The shield substrate according to this invention is provided with a conductive film on which slits each having a shape through which electromagnetic wave noise does not leak are formed. These slits are rectangular slits formed in an array on the conductive film. In accordance with this configuration, the length of the straight line on the conductive film is interrupted by the slits, and thermal stress generated on the conductive film is interrupted by the slits. Thus, the thermal stress on the conductive film will not be excessively concentrated at one point, thereby preventing crack or flake-off from occurring on the conductive film.

Abstract: A rolling load signal is detected during a few rotations of a top and a bottom backup roll at different detection time points at which the top and bottom backup rolls are out of phase from each other and then are analyzed by Fourier analysis so as to detect the amplitudes and phases of the eccentricity of the top and bottom backup rolls separately, whereby the roll gap is controlled and the separately detected eccentricity of the top and bottom backup rolls is thus obtained. Even when there is a difference in roll eccentricity frequency between the top and bottom backup rolls and even when external disturbances exist due to the aging of the roll eccentricity and to the estimated errors of the mill constant M and the plasticity coefficient Q of a piece of metal to be rolled, the roll eccentricity can be suitably adjusted so that the roll eccentricity can be detected with a high degree of accuracy and then eliminated.

Abstract: A semiconductor memory device includes memory cells arranged in a matrix array, a plurality of pairs of bit lines, each pair of bit lines being connected to the memory cells on the same column, a plurality of pairs of switching MOS transistors, each pair of MOS transistors being connected between a power source terminal and each pair of bit lines, and a precharge control circuit for supplying a control signal to the gates of the switching MOS transistors. This memory device further includes delay circuits connected in series with each other, and the delay circuits delay the control signal from the precharge control circuit and supply the control signal to the gates of the switching MOS transistors at different timings.

Abstract: An apparatus for detecting a roll eccentricity in a rolling mill includes mark pulse generators each provided for upper and lower rolls from which an eccentricity is to be detected, the mark pulse generator generating one pulse per one rotation of the roll, sampling pulse generators each provided for the upper and lower rolls for generating n pulses per one rotation of the roll, and a rolling pressure detector for the rolls.After a mark pulse is generated, the rolling pressure signal outputted from the rolling pressure detector is first stored at the output timings of the sampling pulses. Next, a difference of the rolling pressure signals outputted from the rolling pressure detector is subjected to a Fourier transformation, the rolling pressure signals corresponding to those obtained after and before the relative phases of the upper and lower rolls are changed. The resultant values together with rotary angles and relative phases are used to output an eccentricity quantities independently for each roll.