Patents by Inventor Hajime Kando

Hajime Kando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200083859
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: November 12, 2019
    Publication date: March 12, 2020
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 10511279
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: December 17, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Patent number: 10250227
    Abstract: A frequency-variable filter includes a filter unit and matching circuits. The filter unit includes frequency-variable resonance circuits that include piezoelectric resonators. The matching circuits have a circuit configuration in which a real number component of an impedance increases as the frequency increases. For example, the matching circuits have an L-type circuit configuration that includes a reactance element connected in shunt to the side of the filter unit and that includes an inductor and a capacitor. As the filter unit includes the piezoelectric resonators, the real number component of the impedance increases as the pass band shifts to a high-frequency side, but the real number component of the impedance increases as the frequency increases in the matching circuits as well. Thus, the impedance matching is achieved.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: April 2, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hajime Kando, Masakazu Tani
  • Patent number: 10205085
    Abstract: A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: February 12, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Iwamoto, Hajime Kando
  • Patent number: 10009010
    Abstract: A resonant circuit includes a resonator having a resonant frequency and an anti-resonant frequency, an inductor connected in series to the resonator, an inductor connected in parallel to the resonator, and a series circuit in which a variable capacitor is connected in series to an inductor (15). The series circuit is connected in parallel to the resonator. The anti-resonant frequency closest to the resonant frequency of the resonator is moved toward higher frequencies or lower frequencies of the resonant frequency on a frequency axis with a variation in the capacitance value of the variable capacitor. With this configuration, a resonator device and a high-frequency filter are provided, in which the relationship between a transmission frequency band and a reception frequency band on the frequency axis is applicable to a variety of multiple communication bands.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: June 26, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hajime Kando, Masakazu Tani
  • Patent number: 9882547
    Abstract: A tunable filter using Love waves includes an inductance for band extension connected to each of piezoelectric resonators, variable capacitances are connected to the piezoelectric resonator, the piezoelectric resonators each include a LiNbO3 substrate and an IDT electrode, and a pass band and an attenuation region are positioned in a frequency region on a lower frequency side relative to a value obtained by a calculation in which an acoustic velocity of a low-velocity transversal wave propagating in the LiNbO3 substrate is divided by a wave length defined by a period of the IDT electrode.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: January 30, 2018
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hajime Kando
  • Patent number: 9837598
    Abstract: A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO3, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO3. The first and second electrodes are each formed by a conductor having a specific acoustic impedance higher than the specific acoustic impedance of a transversal wave that propagates in LiTaO3. When the sum of the film thicknesses of the first and second electrodes is defined as an electrode thickness, and the thickness of the piezoelectric thin plate made of LiTaO3 is defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is not less than 5% and not more than 40%.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: December 5, 2017
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hajime Kando
  • Patent number: 9831848
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: November 28, 2017
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Publication number: 20170331449
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: August 2, 2017
    Publication date: November 16, 2017
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 9780292
    Abstract: A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO3, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO3, and of the Euler Angles (?, ?, ?) of LiTaO3, ? is 0°, and ? is in the range of not less than 54° and not more than 107°.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: October 3, 2017
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hajime Kando
  • Patent number: 9748923
    Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (?, ?, ?) of the LiTaO3 fall within specific ranges.
    Type: Grant
    Filed: May 23, 2013
    Date of Patent: August 29, 2017
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hajime Kando, Syunsuke Kido, Keiji Okada, Munehisa Watanabe
  • Publication number: 20170125662
    Abstract: A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.
    Type: Application
    Filed: December 6, 2016
    Publication date: May 4, 2017
    Inventors: Takashi IWAMOTO, Hajime KANDO
  • Patent number: 9553253
    Abstract: A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: January 24, 2017
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takashi Iwamoto, Hajime Kando
  • Patent number: 9530956
    Abstract: A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO3, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO3. The first and second electrodes are each formed by a conductor having a specific acoustic impedance higher than the specific acoustic impedance of a transversal wave that propagates in LiTaO3. When the sum of the film thicknesses of the first and second electrodes is defined as an electrode thickness, and the thickness of the piezoelectric thin plate made of LiTaO3 is defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is in the range of not less than 40% and not more than 95%.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: December 27, 2016
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hajime Kando
  • Publication number: 20160329876
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Application
    Filed: July 18, 2016
    Publication date: November 10, 2016
    Inventors: Munehisa WATANABE, Hideki IWAMOTO, Hajime KANDO, Syunsuke KIDO
  • Patent number: 9484885
    Abstract: A method for manufacturing an elastic wave device includes a step of preparing a supporting substrate, a step of forming a high-acoustic-velocity film on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a step of forming a low-acoustic-velocity film on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, a step of forming the piezoelectric film on the low-acoustic-velocity film, and a step of forming an IDT electrode on a surface of the piezoelectric film.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: November 1, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Patent number: 9466782
    Abstract: A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: October 11, 2016
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hajime Kando, Mari Saji
  • Patent number: 9431996
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: August 30, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Patent number: 9413334
    Abstract: An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, ?, 0°), ? is in the range of about 0° to about 8° and about 57° to about 180°.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: August 9, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hajime Kando
  • Publication number: 20160211824
    Abstract: A frequency-variable filter includes a filter unit and matching circuits. The filter unit includes frequency-variable resonance circuits that include piezoelectric resonators. The matching circuits have a circuit configuration in which a real number component of an impedance increases as the frequency increases. For example, the matching circuits have an L-type circuit configuration that includes a reactance element connected in shunt to the side of the filter unit and that includes an inductor and a capacitor. As the filter unit includes the piezoelectric resonators, the real number component of the impedance increases as the pass band shifts to a high-frequency side, but the real number component of the impedance increases as the frequency increases in the matching circuits as well.
    Type: Application
    Filed: March 23, 2016
    Publication date: July 21, 2016
    Inventors: Hajime KANDO, Masakazu TANI