Patents by Inventor Hajime Karasawa
Hajime Karasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10720324Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.Type: GrantFiled: July 21, 2017Date of Patent: July 21, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Kimihiko Nakatani, Hiroshi Ashihara, Hajime Karasawa, Kazuhiro Harada
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Patent number: 10199219Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.Type: GrantFiled: June 12, 2017Date of Patent: February 5, 2019Assignee: Hitachi Kokusai Electric, Inc.Inventors: Satoshi Shimamoto, Yoshiro Hirose, Hajime Karasawa, Ryota Horiike, Naoharu Nakaiso, Yoshitomo Hashimoto
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Publication number: 20180363138Abstract: There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.Type: ApplicationFiled: August 28, 2018Publication date: December 20, 2018Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kimihiko NAKATANI, Tsukasa KAMAKURA, Hajime KARASAWA, Kazuhiro HARADA
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Patent number: 10032630Abstract: There is provided a technique for facilitating a patterning process by the DSA appropriately and efficiently. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including (a) accommodating in a process chamber a substrate having a guide pattern thereon; (b) supplying a plasma of a first process gas into the process chamber to subject the substrate to first one of a first process for hydrophilizing the substrate and a second process for hydrophobilizing the substrate; and (c) supplying a plasma of a second process gas into the process chamber to subject the substrate to second one of the first process and the second process other than the first one of the first process and the second process.Type: GrantFiled: September 20, 2017Date of Patent: July 24, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Katsuhiko Yamamoto, Hajime Karasawa, Kazuyuki Toyoda
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Patent number: 10026607Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: GrantFiled: July 22, 2016Date of Patent: July 17, 2018Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Publication number: 20180033607Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.Type: ApplicationFiled: July 21, 2017Publication date: February 1, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko NAKATANI, Hiroshi ASHIHARA, Hajime KARASAWA, Kazuhiro HARADA
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Publication number: 20170365467Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.Type: ApplicationFiled: June 12, 2017Publication date: December 21, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Satoshi SHIMAMOTO, Yoshiro HIROSE, Hajime KARASAWA, Ryota HORIIKE, Naoharu NAKAISO, Yoshitomo HASHIMOTO
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Publication number: 20170200599Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: ApplicationFiled: March 24, 2017Publication date: July 13, 2017Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
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Publication number: 20160329208Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: ApplicationFiled: July 22, 2016Publication date: November 10, 2016Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
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Patent number: 9487861Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: GrantFiled: June 15, 2016Date of Patent: November 8, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Patent number: 9478417Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: GrantFiled: March 28, 2016Date of Patent: October 25, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Publication number: 20160298236Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: ApplicationFiled: June 15, 2016Publication date: October 13, 2016Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
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Patent number: 9443720Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: GrantFiled: March 28, 2016Date of Patent: September 13, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Patent number: 9443719Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: GrantFiled: March 28, 2016Date of Patent: September 13, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Publication number: 20160211133Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: ApplicationFiled: March 28, 2016Publication date: July 21, 2016Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
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Publication number: 20160211134Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: ApplicationFiled: March 28, 2016Publication date: July 21, 2016Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
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Publication number: 20160211132Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: ApplicationFiled: March 28, 2016Publication date: July 21, 2016Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
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Patent number: 9384970Abstract: Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.Type: GrantFiled: April 6, 2015Date of Patent: July 5, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Patent number: 9384972Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer by supplying a gas containing a second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.Type: GrantFiled: April 8, 2015Date of Patent: July 5, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
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Patent number: 9384967Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a first element, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.Type: GrantFiled: April 1, 2015Date of Patent: July 5, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose