Abstract: A semiconductor device includes: a semiconductor chip; and a field effect transistor formed on the semiconductor chip and including a plurality of unit cells, which include at least one first unit cell including a first on-resistance component and a first feedback capacitance component, and at least one second unit cell including a second on-resistance component forming a parallel component with respect to the first on-resistance component and exceeding the first on-resistance component and a second feedback capacitance component forming a parallel component with respect to the first feedback capacitance component and being less than the first feedback capacitance component.

Abstract: A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.

Abstract: A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface and an element back surface facing opposite sides to each other in a thickness direction, and a first electrode arranged on the element main surface; an insulator that has an annular shape overlapping an outer peripheral edge of the first electrode when viewed in the thickness direction and is arranged over the first electrode and the element main surface; a first metal layer arranged over the first electrode and the insulator; and a second metal layer laminated on the first metal layer and overlapping both the first electrode and the insulator when viewed in the thickness direction.

Abstract: At least one of nozzle holes is provided as a non-circular nozzle hole where the ratio of the longest diameter to the shortest diameter of an outlet opening portion is greater than 1. A virtual non-circular cone and a virtual circular cone are defined for each of the non-circular nozzle hole and a circular nozzle hole where the ratio of the longest diameter to the shortest diameter of the outlet opening portion is 1. At least two adjacent nozzle holes are formed such that the virtual non-circular cone does not interfere with the virtual circular cone or the virtual non-circular cone.

Abstract: A fuel injection device includes: an injector, an electronic control device, a communication circuit, and a power supply circuit. A memory is provided in the injector for storing fuel injection control data set for each injector. The electronic control device controls a fuel injection of the injector based on the control data. The communication circuit is installed for each injector, and enables the electronic control device to access the memory via wireless communication. The power supply circuit is installed for each injector, has a power source that supplies electric power to the communication circuit, and receives electric power to charge the power source from a drive line that connects the electronic control device and a drive unit of the injector.

Abstract: A semiconductor device includes: a semiconductor chip; and a field effect transistor formed on the semiconductor chip and including a plurality of unit cells, which include at least one first unit cell including a first on-resistance component and a first feedback capacitance component, and at least one second unit cell including a second on-resistance component forming a parallel component with respect to the first on-resistance component and exceeding the first on-resistance component and a second feedback capacitance component forming a parallel component with respect to the first feedback capacitance component and being less than the first feedback capacitance component.

Abstract: A needle has a seal portion that contacts a valve seat, and is provided so as to be able to reciprocate inside a valve body. A sack chamber is formed between the seal portion and a recess. A seal portion is formed in a curved shape protruding in the axial direction of the needle. A distance between an inlet intersection and a needle intersection on a same virtual straight line is defined as a distance Dh, and a distance between the recess and the seal portion on an axis of the valve body is defined as a distance Ds. When the seal portion is in contact with the valve seat, the distance Dh is larger than the distance Ds (Dh>Ds).

Abstract: To provide a semiconductor device having improved performances. A semiconductor substrate has, in the surface layer portion thereof, an n+ type semiconductor region for source and an n+ type semiconductor region for drain separated from each other. The semiconductor substrate has, on the main surface thereof between the n+ type semiconductor region for source and the n+ type semiconductor region for drain, a gate electrode via an insulating film as a gate insulating film. The semiconductor substrate has, in the main surface thereof between the channel formation region below the gate electrode and the n+ type semiconductor region for drain, a LOCOS oxide film and an STI insulating. Of the LOCOS oxide film and the STI insulating film, the LOCOS oxide film is located on the side of the channel formation region and the STI insulating film is on the side of the n+ type semiconductor region DR for drain.

Abstract: To provide a semiconductor device having improved performances. A semiconductor substrate has, in the surface layer portion thereof, an n+ type semiconductor region for source and an n+ type semiconductor region for drain separated from each other. The semiconductor substrate has, on the main surface thereof between the n+ type semiconductor region for source and the n+ type semiconductor region for drain, a gate electrode via an insulating film as a gate insulating film. The semiconductor substrate has, in the main surface thereof between the channel formation region below the gate electrode and the n+ type semiconductor region for drain, a LOCOS oxide film and an STI insulating. Of the LOCOS oxide film and the STI insulating film, the LOCOS oxide film is located on the side of the channel formation region and the STI insulating film is on the side of the n+ type semiconductor region DR for drain.

Abstract: A turbo-generator has a tapering cooling part positioned between a vapor turbine part and a generator part, and casings of these parts are combined together to form a sealed single-boundary structure. A turbine shaft in the vapor turbine part, a rotary shaft in the cooling part and a generator shaft in the generator part are combined unitarily and are supported by bearing parts in such a way that the unitary shaft does not pass from the boundary structure. The tapering cooling part has a smaller diameter at the side of the generator part, and the inner circumferential surface of the cooling part forms a labyrinth structure to separate the atmospheres of the vapor turbine part and the generator part.

Abstract: Disclosed are a method of making a connection in a liquid and an apparatus therefor wherein a first connector having a protrusion at its front end is housed in a protecting tube which is open at its lower end and into which a gas is introduced, the protecting tube is filled with the gas so as to form a gaseous space therein within the liquid, a second container which is normally held within the liquid and which has a destructible plate at its upper end is exposed to the gaseous space, and the destructible plate is destroyed by the front end of said one connector so as to connector both connectors, whereby the connection in the liquid can be made without being affected by an ambient liquid.

Abstract: Disclosed are a method of making a connection in a liquid and an apparatus therefor wherein a first connector having a protrusion at its front end is housed in a protecting tube which is open at its lower end and into which a gas is introduced, the protecting tube is filled with the gas so as to form a gaseous space therein within the liquid, a second connector which is normally held within the liquid and which has a destructible plate at its upper end is exposed to the gaseous space, and the destructible plate is destroyed by the front end of said one connector so as to connect both connectors, whereby the connection in the liquid can be made without being affected by an ambient liquid.

Abstract: Disclosed are a method of making a connection in a liquid and an apparatus therefor wherein a first connector having a protrusion at its front end is housed in a protecting tube which is open at its lower end and into which a gas is introduced, the protecting tube is filled with the gas so as to form a gaseous space therein within the liquid, a second connector which is normally held within the liquid and which has a destructible plate at its upper end is exposed to the gaseous space, and the destructible plate is destroyed by the front end of said one connector so as to connect both connectors, whereby the connection in the liquid can be made without being affected by an ambient liquid.