Patents by Inventor Hajime Kawabe

Hajime Kawabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor device
    Patent number: 7211519
    Abstract: After an SiC film (4), an SiO2 film (5) and a silicon nitride film (6) are formed sequentially on an organic low dielectric constant film (3), by performing O2 plasma processing to a surface of the silicon nitride film (6), an oxide layer (7) is formed on the surface of the silicon nitride film (6). Then, a wiring trench pattern is formed on the silicon nitride film (6) and the oxide layer (7), and a resin layer (10) on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer (7) exposed from the resin layer (10) is removed along with unnecessary particles.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: May 1, 2007
    Assignee: Fujitsu Limited
    Inventors: Yukio Takigawa, Noriyoshi Shimizu, Toshiya Suzuki, Hajime Kawabe
  • Method for manufacturing semiconductor device
    Publication number: 20050191852
    Abstract: After an SiC film (4), an SiO2 film (5) and a silicon nitride film (6) are formed sequentially on an organic low dielectric constant film (3), by performing O2 plasma processing to a surface of the silicon nitride film (6), an oxide layer (7) is formed on the surface of the silicon nitride film (6). Then, a wiring trench pattern is formed on the silicon nitride film (6) and the oxide layer (7), and a resin layer (10) on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer (7) exposed from the resin layer (10) is removed along with unnecessary particles.
    Type: Application
    Filed: March 31, 2005
    Publication date: September 1, 2005
    Applicant: FUJITSU LIMITED
    Inventors: Yukio Takigawa, Noriyoshi Shimizu, Toshiya Suzuki, Hajime Kawabe