Patents by Inventor Hajime Kudoh

Hajime Kudoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6344885
    Abstract: A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second substrate and a liquid crystal sandwiched between the first substrate and the second substrate. The liquid crystal display device further comprises semiconductor elements (FG) formed over the first substrate and arranged in a matrix, and a light shielding film (BS) formed over the first substrate for blocking the light which would enter the semiconductor elements from the display face of the liquid crystal display device if not blocked.
    Type: Grant
    Filed: April 1, 1999
    Date of Patent: February 5, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Ikuko Mori, Takuo Kaitoh, Hironobu Abe, Masahiro Eto, Toshihiro Satoh, Kazuhiro Ishida, Hajime Kudoh
  • Patent number: 6255131
    Abstract: A method for forming a liquid crystal display device, which includes steps of forming a metal film over a substrate, patterning the metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element, and forming a first insulating film over the metal film. The steps further include forming a first polycrystalline-silicon layer over the first insulating film, and patterning the first polycrystalline-silicon layer to form a second capacitor electrode as a part of the first capacity element and a second capacity element, while additionally including the steps forming a second insulating film over the polycrystalline-silicon layer, forming a second polycrystalline-silicon layer over the second insulating film, and patterning the second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of the second capacity element.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: July 3, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Ikuko Mori, Takuo Kaitoh, Hironobu Abe, Masahiro Eto, Toshihiro Satoh, Kazuhiro Ishida, Hajime Kudoh