Abstract: A semiconductor device includes an organic semiconductor layer 10 and an oxide semiconductor layer 11, and emits light.

Abstract: An organic solid-state dye laser (1) is disclosed comprising a substrate (2) and a resonator structure made of a thin film of organic semiconductor (3) formed on the substrate (2) wherein the thin film of organic semiconductor (3) is composed of an organic semiconductor material which is high in emission quantum yield and substantially devoid of excitation absorption at an excitation level and includes one of a bis-styryl derivative or a triphenylamine derivative whereby its amplified spontaneous emission under excitation light irradiation is continuously obtained. The thin film of organic semiconductor (2) may be of a material having BSB-Cz or TPD added to a host molecule of CBP and capable of amplified spontaneous emission at a threshold value as low as 3 mW.

Abstract: An organic EL device including a substrate, a positive electrode layer, a first organic layer containing a first organic light-emitting material, a negative electrode layer made of metal, and a second organic layer containing a second organic light-emitting material capable of emitting light by absorbing at least a part of light emitted from the first organic light-emitting material, in this order is provided. The negative electrode layer preferably includes a layer made of Ag.

Abstract: There is provided an organic electroluminescence device including of a substrate, an anode layer, an organic layer including at least one organic material and a cathode layer. A primary light outgoing direction of the device is parallel to a surface of the substrate. Any one of cutoff wavelengths in a transverse electric mode of an optical waveguide having a core layer partially formed of the organic layer is within a wavelength range of a full width at half maximum of a fluorescence spectrum of any one of the organic materials included in the organic layer.

Abstract: A semiconductor device including a semiconductor 1, a first electrode 2, an insulating layer 3 interposed between the semiconductor 1 and the first electrode 2, the second electrode 4 which is in contact with the semiconductor 1 and is detached from the first electrode 2, and the third electrode 5 which is in contact with the semiconductor 1 and is detached from the first electrode 2 and the second electrode 4, wherein the semiconductor 1 is provided with the organic semiconductor layer 10 and the oxide semiconductor layer 11.