Abstract: A vacuum processing apparatus includes a process chamber, a load lock chamber connected to the process chamber, and a transfer device configured to transfer a substrate from the load lock chamber to the process chamber. The transfer device is configured to move the substrate by gravity. The transfer device includes a guide configured to form a transfer path when the substrate moves by the gravity, and a stopper configured to limit movement of the substrate by the gravity when holding the substrate, and cancel the limitation when moving the substrate.

Abstract: A vacuum processing apparatus includes two process chambers and three load-lock chambers which are alternately connected in series, and a transferring device which transfers a plurality of carriers only between the process chamber and the load-lock chambers that are adjacent to each other. A substrate undergoes deposition processing when the carrier is positioned in the process chamber by the transferring device, and the substrate is replaced when the carrier is positioned in the load-lock chamber by the transferring device.

Abstract: This invention discloses ionization sputtering apparatuses which have a function for ionizing sputtered particles. Those apparatuses comprise an ionization means for ionizing sputtered particles from a target. The ionization means generates a plasma by applying radio frequency energy with plasma generation gas at an ionization space between the target and a holder holding a substrate. An disclosed apparatus comprises a magnetic device preventing the plasma from diffusing from the ionization space. Another disclosed apparatus comprises a magnetic device which orients the ionized sputtered particles toward the substrate.

Abstract: A sputtering apparatus is provided with a magnetic assembly which is rotated and revolved, and the eccentric distance between the rotation axis and the revolution axis is varied. By this arrangement, erosion profile of a target is made uniform, whereby a uniform thin film is deposited on a substrate surface.

Abstract: A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.

Abstract: A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel.