Abstract: A liquid crystal display device including: a reflective region including an insulating resin layer, an inorganic transparent electrode, and a reflective film disposed on the inorganic transparent electrode; and a transmissive region including the insulating resin layer and the inorganic transparent electrode, wherein in the reflective region, the insulating resin layer is provided on a surface with first projections and recesses, the inorganic transparent electrode is disposed on the first projections and recesses, and the reflective film is provided on a surface with finer second projections and recesses than the first projections and recesses, in the transmissive region, the insulating resin layer is provided on the surface with a smooth portion, and the inorganic transparent electrode is disposed on the smooth portion, and the insulating resin layer and the inorganic transparent electrode are each continuously disposed at a boundary between the reflective region and the transmissive region.

Abstract: The liquid crystal display device includes: a first substrate; a second substrate facing the first substrate; and a liquid crystal layer between the first substrate and the second substrate. The first substrate includes first electrodes for applying voltage to the liquid crystal layer, an uneven insulating layer disposed on a liquid crystal layer side of the first electrodes and including a first uneven structure on a liquid crystal layer side surface, and a reflective layer covering the first uneven structure of the uneven insulating layer and including a second uneven structure on a liquid crystal layer side surface. The reflective layer is electrically insulated from the first electrodes by the uneven insulating layer. A material of the uneven insulating layer and a liquid crystal material have a difference in relative permittivity of 0.3 or less. The second substrate includes a second electrode for applying voltage to the liquid crystal layer.

Abstract: The present invention provides a liquid crystal display panel capable of reducing display defects due to bubbles. The liquid crystal display panel of the present invention includes, sequentially from a back side to a viewing side, a first substrate, a liquid crystal layer, and a second substrate. The first substrate includes, sequentially from a liquid crystal layer side, a pixel electrode and an organic insulating film in contact with the pixel electrode. The organic insulating film is provided with a void at a position overlapping an end of the pixel electrode. Preferably, the second substrate includes a black matrix and the void overlaps the black matrix.

Abstract: The present invention provides a liquid crystal display panel capable of reducing display defects due to bubbles. The liquid crystal display panel of the present invention includes, sequentially from a back side to a viewing side, a first substrate, a liquid crystal layer, and a second substrate. The first substrate includes, sequentially from a liquid crystal layer side, a pixel electrode and an organic insulating film in contact with the pixel electrode. The organic insulating film is provided with a void at a position overlapping an end of the pixel electrode. Preferably, the second substrate includes a black matrix and the void overlaps the black matrix.

Abstract: A liquid crystal display device including: a reflective region including an insulating resin layer, an inorganic transparent electrode, and a reflective film disposed on the inorganic transparent electrode; and a transmissive region including the insulating resin layer and the inorganic transparent electrode, wherein in the reflective region, the insulating resin layer is provided on a surface with first projections and recesses, the inorganic transparent electrode is disposed on the first projections and recesses, and the reflective film is provided on a surface with finer second projections and recesses than the first projections and recesses, in the transmissive region, the insulating resin layer is provided on the surface with a smooth portion, and the inorganic transparent electrode is disposed on the smooth portion, and the insulating resin layer and the inorganic transparent electrode are each continuously disposed at a boundary between the reflective region and the transmissive region.

Abstract: Steel for machine structure use excellent in tool lifetime in a broad range of cutting speeds regardless of continuous machining, intermittent machining, or other systems and further in various machining environments such as use of a cutting fluid or a dry, semidry, and oxygen enriched environment, having a chemical composition containing, by mass %, C: 0.01 to 1.2%, Si: 0.005 to 3.0%, Mn: 0.05 to 3.0%, P: 0.0001 to 0.2%, S: 0.0001 to 0.35%, N: 0.0005 to 0.035%, and Al: 0.05 to 1.0%, satisfying [Al %]?(27/14)×[N %]?0.05%, and having a balance of Fe and unavoidable impurities and forming an Al2O3 coating on the surface of a cutting tool by machining using a cutting tool coated on the surface contacting the machined material by metal oxides with a value of a standard free energy of formation at 1300° C. of that value of Al2O3 or more, and a machining method of the same.

Abstract: This invention provides a forging steel excellent in forgeability, which forging steel comprises, in mass %, C: 0.001 to less than 0.07%, Si: 3.0% or less, Mn: 0.01 to 4.0%, Cr: 5.0% or less, P: 0.2% or less, S: 0.35% or less, Al: 0.0001 to 2.0%, N: 0.03% or less, one or both of Mo: 1.5% or less (including 0%) and Ni: 4.5% or less (including 0%), and a balance of iron and unavoidable impurities; wherein Di given by the following Equation (1) is 60 or greater: Di=5.

Abstract: Steel for machine structure use for surface hardening containing, by mass %, C: 0.3 to 0.6%, Si: 0.02 to 2.0%, Mn: 1.5% to 3.0%, W: 0.0025 to 0.5%, Al: 0.001 to 0.5%, N: 0.003 to 0.02%, S: 0.0001 to 0.025%, P: 0.0001 to 0.03%, and O: 0.0001 to 0.0050%, having an Mn/S of 70 to 30000, and having a balance of substantially Fe and unavoidable impurities.

Abstract: A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor (100) and a p-channel type second thin film transistor (200) are provided on the plane of a substrate (1). A first semiconductor layer (11) of the first thin film transistor (100) has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (11), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (11). A second semiconductor layer (20) has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (20), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (20).

Abstract: Steel for machine structure use for surface hardening containing, by mass %, C: 0.3 to 0.6%, Si: 0.02 to 2.0%, Mn: 1.5% to 3.0%, W: 0.0025 to 0.5%, Al: 0.001 to 0.5%, N: 0.003 to 0.02%, S: 0.0001 to 0.025%, P: 0.0001 to 0.03%, and O: 0.0001 to 0.0050%, having an Mn/S of 70 to 30000, and having a balance of substantially Fe and unavoidable impurities.

Abstract: A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor (100) and a p-channel type second thin film transistor (200) are provided on the plane of a substrate (1). A first semiconductor layer (11) of the first thin film transistor (100) has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (11), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (11). A second semiconductor layer (20) has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (20), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (20).

Abstract: This invention provides a case-hardening steel excellent in cold forgeability and low carburization distortion property that exhibits low deformation resistance and high limit compressibility when cold, namely, a case-hardening steel excellent in cold forgeability and low carburization distortion property comprising, in mass %, C: 0.07% to 0.3%, Si: 0.01% to 0.15%, Mn: 0.1% to 0.7%, P: 0.03% or less, S: 0.002% to 0.10%, Al: 0.01% to 0.08%, Cr: 0.7% to 1.5%, Ti: 0.01% to 0.15%, B: 0.0005% to 0.005%, N: 0.008% or less, and the balance of Fe and unavoidable impurities, and having a metallographic structure comprising 65% or greater of ferrite and 15% or less of bainite.

Abstract: Steel for machine structure use excellent in tool lifetime in a broad range of cutting speeds regardless of continuous machining, intermittent machining, or other systems and further in various machining environments such as use of a cutting fluid or a dry, semidry, and oxygen enriched environment, having a chemical composition containing, by mass %, C: 0.01 to 1.2%, Si: 0.005 to 3.0%, Mn: 0.05 to 3.0%, P: 0.0001 to 0.2%, S: 0.0001 to 0.35%, N: 0.0005 to 0.035%, and Al: 0.05 to 1.0%, satisfying [Al %]?(27/14)×[N %]?0.05%, and having a balance of Fe and unavoidable impurities and forming an Al2O3 coating on the surface of a cutting tool by machining using a cutting tool coated on the surface contacting the machined material by metal oxides with a value of a standard free energy of formation at 1300° C. of that value of Al2O3 or more, and a machining method of the same.

Abstract: Steel for machine structure use for surface hardening containing, by mass %, C: 0.3 to 0.6%, Si: 0.02 to 2.0%, Mn: 1.5% to 3.0%, W: 0.0025 to 0.5%, Al: 0.001 to 0.5%, N: 0.003 to 0.02%, S: 0.0001 to 0.025%, P: 0.0001 to 0.03%, and O: 0.0001 to 0.0050%, having an Mn/S of 70 to 30000, and having a balance of substantially Fe and unavoidable impurities.

Abstract: This steel for induction hardening includes: in terms of mass %, C: 0.40% or more to 0.75% or less; Si: 0.002% or more to 3.0% or less; Mn: 0.20% or more to 2.0% or less; S: 0.002% or more to 0.1% or less; Al: more than 0.10% to 3.0% or less; P: 0.030% or less; and N: 0.035% or less, with the remainder being Fe and inevitable impurities.

Abstract: This invention provides a forging steel excellent in forgeability, which forging steel comprises, in mass %, C: 0.001 to less than 0.07%, Si: 3.0% or less, Mn: 0.01 to 4.0%, Cr: 5.0% or less, P: 0.2% or less, S: 0.35% or less, Al: 0.0001 to 2.0%, N: 0.03% or less, one or both of Mo: 1.5% or less (including 0%) and Ni: 4.5% or less (including 0%), and a balance of iron and unavoidable impurities; wherein Di given by the following Equation (1) is 60 or greater: Di=5.

Abstract: The present invention is a door construction for a vehicle provided with a door main body including an inner panel on a cabin interior side and an outer panel on a cabin exterior side. The inner panel and the outer panel are formed in a concaved-shape when viewed from the cabin interior side; a hemming flange is provided on a periphery of the inner panel, which is to be turned onto the outer panel; and the inner panel and the outer panel are joined with each other by joining the hemming flange onto the cabin exterior side of the outer panel by a hemming.

Abstract: This invention provides a case-hardening steel excellent in cold forgeability and low carburization distortion property that exhibits low deformation resistance and high limit compressibility when cold, namely, a case-hardening steel excellent in cold forgeability and low carburization distortion property comprising, in mass %, C: 0.07% to 0.3%, Si: 0.01% to 0.15%, Mn: 0.1% to 0.7%, P: 0.03% or less, S: 0.002% to 0.10%, Al: 0.01% to 0.08%, Cr: 0.7% to 1.5%, Ti: 0.01% to 0.15%, B: 0.0005% to 0.005%, N: 0.008% or less, and the balance of Fe and unavoidable impurities, and having a metallographic structure comprising 65% or greater of ferrite and 15% or less of bainite.

Abstract: This door construction for a vehicle has a door main body which includes: an inner panel on a cabin interior side; an outer panel on a cabin exterior side; and an interior decoration cover disposed on the cabin interior side of the inner panel. The interior decoration cover is joined to the outer panel through an opening formed in the inner panel.

Abstract: A rear door that is provided in an openable and closable manner at a vehicle body rear portion, the rear door having: a frame portion that forms along an external edge of the rear door, a door windshield panel that is provided in the frame portion, and a lateral beam that spans between both lower end corner portions of the windshield panel, wherein at coupling portions of the frame portion and the lateral beam, the frame portion and the lateral beam each have a closed sectional structure, and the closed sections of the frame portion and the lateral beam are continuous.