Patents by Inventor Hajime Shirai

Hajime Shirai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Information processing apparatus and firmware updating method
    Patent number: 8631399
    Abstract: An apparatus includes a first processor including a first storage having a first and a second area, a download-instructor issuing a download-instruction downloading a second firmware from the second area of the first storage at power-off, and a first-launcher switching the second area of the first storage from standby-system to working-system and launching a first firmware at power-on, and a second processor including a second storage having a first area as a working-system and a second area as a standby-system, a downloader downloading the second firmware stored in the second area of the first storage as the first storage standby-system into the second area of the second storage as the second storage standby-system when the downloading-instruction is received, and a second-launcher switching the second area of the second storage from the standby-system to the working-system and launching the second firmware in the second area of the second storage at power-on.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: January 14, 2014
    Assignee: Fujitsu Limited
    Inventors: Go Endo, Hajime Shirai
  • Method for dehydrogenation treatment and method for forming crystalline silicon film
    Patent number: 7998841
    Abstract: A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.
    Type: Grant
    Filed: March 4, 2009
    Date of Patent: August 16, 2011
    Assignee: Advanced LCD Technologies Development Center Co., Ltd.
    Inventors: Kazufumi Azuma, Hajime Shirai
  • INFORMATION PROCESSING APPARATUS AND FIRMWARE UPDATING METHOD
    Publication number: 20110093843
    Abstract: An apparatus includes a first processor including a first storage having a first and a second area, a download-instructor issuing a download-instruction downloading a second firmware from the second area of the first storage at power-off, and a first-launcher switching the second area of the first storage from standby-system to working-system and launching a first firmware at power-on, and a second processor including a second storage having a first area as a working-system and a second area as a standby-system, a downloader downloading the second firmware stored in the second area of the first storage as the first storage standby-system into the second area of the second storage as the second storage standby-system when the downloading-instruction is received, and a second-launcher switching the second area of the second storage from the standby-system to the working-system and launching the second firmware in the second area of the second storage at power-on.
    Type: Application
    Filed: October 13, 2010
    Publication date: April 21, 2011
    Applicant: FUJITSU LIMITED
    Inventors: Go ENDO, Hajime Shirai
  • METHOD FOR DEHYDROGENATION TREATMENT AND METHOD FOR FORMING CRYSTALLINE SILICON FILM
    Publication number: 20090246939
    Abstract: A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.
    Type: Application
    Filed: March 4, 2009
    Publication date: October 1, 2009
    Inventors: Kazufumi AZUMA, Hajime Shirai